HN1K05FU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HN1K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K05FU For Portable Devices Unit: mm High Speed Switching Applications Interface Applications High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. : Vth = 0.5 to 1.0 V Suitable for high-density mounting because of a compact pa

HN1K06FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K06FU High Speed Switching Applications Unit: mmAnalog Switch Applications High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. : Vth = 0.5 to 1.5 V Switching speed is fast. Suitable for high-density mounting because of

HN1K03FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K03FU Unit in mmHigh Speed Switching Applications Analog Switch Applications Hign input impedance Low gate threshold voltage : V = 0.5V~1.5V th Excellent switching times : t = 0.16s (typ.) ont = 0.15s (typ.) off Small package Enhancement-mode Absolute Maximum Ratings (Ta = 25C) (

HN1K02FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K02FU High Speed Switching Applications Unit in mmAnalog Switch Applications 2.5 V gate drive. Low threshold voltage: V = 0.5V~1.5V th High speed Enhancement-mode Small package Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating UnitDrain-Source voltage VD

HN1K04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K04FU High Speed Switching Applications Unit: mmAnalog Switch Applications High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. : Vth = 0.8 to 2.5 V Switching speed is fast. Suitable for high-density mounting because of