HN1K05FU Specs and Replacement

Type Designator: HN1K05FU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 12 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 28 Ohm

Package: SOT363 SC88 US6

HN1K05FU substitution

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HN1K05FU datasheet

 ..1. Size:159K  toshiba
 hn1k05fu.pdf pdf_icon

HN1K05FU

HN1K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K05FU For Portable Devices Unit mm High Speed Switching Applications Interface Applications High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. Vth = 0.5 to 1.0 V Suitable for high-density mounting because of a compact pa... See More ⇒

 9.1. Size:161K  toshiba
 hn1k06fu.pdf pdf_icon

HN1K05FU

HN1K06FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K06FU High Speed Switching Applications Unit mm Analog Switch Applications High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. Vth = 0.5 to 1.5 V Switching speed is fast. Suitable for high-density mounting because of... See More ⇒

 9.2. Size:296K  toshiba
 hn1k03fu.pdf pdf_icon

HN1K05FU

HN1K03FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K03FU Unit in mm High Speed Switching Applications Analog Switch Applications Hign input impedance Low gate threshold voltage V = 0.5V 1.5V th Excellent switching times t = 0.16 s (typ.) on t = 0.15 s (typ.) off Small package Enhancement-mode Absolute Maximum Ratings (Ta = 25 C) (... See More ⇒

 9.3. Size:302K  toshiba
 hn1k02fu.pdf pdf_icon

HN1K05FU

HN1K02FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K02FU High Speed Switching Applications Unit in mm Analog Switch Applications 2.5 V gate drive. Low threshold voltage V = 0.5V 1.5V th High speed Enhancement-mode Small package Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Drain-Source voltage VD... See More ⇒

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Detailed specifications: 2SK4033, 2SK4034, 2SK4115, 2SK4207, HN1J02FU, HN1K02FU, HN1K03FU, HN1K04FU, IRLZ44N, HN1K06FU, HN1L02FU, HN1L03FU, HN4K03JU, SSM3J01F, SSM3J01T, SSM3J02F, SSM3J02T

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.