HN1K06FU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HN1K06FU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 16 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm
   Paquete / Cubierta: SOT363 SC88 US6

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HN1K06FU Datasheet (PDF)

..1. Size:161K toshiba
hn1k06fu.pdf

HN1K06FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K06FU High Speed Switching Applications Unit: mmAnalog Switch Applications High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. : Vth = 0.5 to 1.5 V Switching speed is fast. Suitable for high-density mounting because of

9.1. Size:296K toshiba
hn1k03fu.pdf

HN1K03FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K03FU Unit in mmHigh Speed Switching Applications Analog Switch Applications Hign input impedance Low gate threshold voltage : V = 0.5V~1.5V th Excellent switching times : t = 0.16s (typ.) ont = 0.15s (typ.) off Small package Enhancement-mode Absolute Maximum Ratings (Ta = 25C) (

9.2. Size:302K toshiba
hn1k02fu.pdf

HN1K02FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K02FU High Speed Switching Applications Unit in mmAnalog Switch Applications 2.5 V gate drive. Low threshold voltage: V = 0.5V~1.5V th High speed Enhancement-mode Small package Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating UnitDrain-Source voltage VD

9.3. Size:159K toshiba
hn1k05fu.pdf

HN1K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K05FU For Portable Devices Unit: mm High Speed Switching Applications Interface Applications High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. : Vth = 0.5 to 1.0 V Suitable for high-density mounting because of a compact pa

9.4. Size:160K toshiba
hn1k04fu.pdf

HN1K04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K04FU High Speed Switching Applications Unit: mmAnalog Switch Applications High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. : Vth = 0.8 to 2.5 V Switching speed is fast. Suitable for high-density mounting because of

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