HN1K06FU - Даташиты. Аналоги. Основные параметры

HN1K06FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K06FU High Speed Switching Applications Unit mm Analog Switch Applications High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. Vth = 0.5 to 1.5 V Switching speed is fast. Suitable for high-density mounting because of

HN1K03FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K03FU Unit in mm High Speed Switching Applications Analog Switch Applications Hign input impedance Low gate threshold voltage V = 0.5V 1.5V th Excellent switching times t = 0.16 s (typ.) on t = 0.15 s (typ.) off Small package Enhancement-mode Absolute Maximum Ratings (Ta = 25 C) (

HN1K02FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K02FU High Speed Switching Applications Unit in mm Analog Switch Applications 2.5 V gate drive. Low threshold voltage V = 0.5V 1.5V th High speed Enhancement-mode Small package Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Drain-Source voltage VD

HN1K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K05FU For Portable Devices Unit mm High Speed Switching Applications Interface Applications High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. Vth = 0.5 to 1.0 V Suitable for high-density mounting because of a compact pa

HN1K04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K04FU High Speed Switching Applications Unit mm Analog Switch Applications High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. Vth = 0.8 to 2.5 V Switching speed is fast. Suitable for high-density mounting because of