SSM3J01T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM3J01T

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 1.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 94 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm

Encapsulados: TSM

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SSM3J01T datasheet

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 ssm3j01t.pdf pdf_icon

SSM3J01T

SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T Power Management Switch Unit mm High Speed Switching Applications Small Package Low on Resistance Ron = 0.4 (max) (@VGS = -4 V) Ron = 0.6 (max) (@VGS = -2.5 V) Low Gate Threshold Voltage Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source

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 ssm3j01f.pdf pdf_icon

SSM3J01T

SSM3J01F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01F High Speed Switching Applications Unit mm Small package Low on resistance Ron = 0.4 (max) (VGS = -4 V) Ron = 0.6 (max) (VGS = -2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDS -30 V Gate-so

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 ssm3j02f.pdf pdf_icon

SSM3J01T

SSM3J02F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02F Power Management Switch Unit mm High Speed Switching Applications Small package Low on resistance Ron = 0.5 (max) (@VGS = -4 V) Ron = 0.7 (max) (@VGS = -2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source

 8.2. Size:184K  toshiba
 ssm3j02t.pdf pdf_icon

SSM3J01T

SSM3J02T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02T Power Management Switch Unit mm High Speed Switching Applications Component package suitable for high-density mounting Small Package Low ON Resistance Ron = 0.5 (max) (@VGS = -4 V) Ron = 0.7 (max) (@VGS = -2.5 V) Low-voltage operation possible Absolute Maximum Ratings

MOSTRAR MÁS

Otros transistores... HN1K03FU, HN1K04FU, HN1K05FU, HN1K06FU, HN1L02FU, HN1L03FU, HN4K03JU, SSM3J01F, IRF3710, SSM3J02F, SSM3J02T, SSM3J05FU, SSM3J09FU, SSM3J108TU, SSM3J109TU, SSM3J110TU, SSM3J111TU