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SSM3J01T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSM3J01T
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 1.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 94 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TSM
 

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SSM3J01T Datasheet (PDF)

 ..1. Size:207K  toshiba
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SSM3J01T

SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T Power Management Switch Unit: mmHigh Speed Switching Applications Small Package Low on Resistance: Ron = 0.4 (max) (@VGS = -4 V) : Ron = 0.6 (max) (@VGS = -2.5 V) Low Gate Threshold Voltage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source

 7.1. Size:312K  toshiba
 ssm3j01f.pdf pdf_icon

SSM3J01T

SSM3J01F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01F High Speed Switching Applications Unit: mm Small package Low on resistance : Ron = 0.4 (max) (VGS = -4 V) : Ron = 0.6 (max) (VGS = -2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDS -30 VGate-so

 8.1. Size:319K  toshiba
 ssm3j02f.pdf pdf_icon

SSM3J01T

SSM3J02F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02F Power Management Switch Unit: mmHigh Speed Switching Applications Small package Low on resistance : Ron = 0.5 (max) (@VGS = -4 V) : Ron = 0.7 (max) (@VGS = -2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source

 8.2. Size:184K  toshiba
 ssm3j02t.pdf pdf_icon

SSM3J01T

SSM3J02T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02T Power Management Switch Unit: mmHigh Speed Switching Applications Component package suitable for high-density mounting Small Package Low ON Resistance : Ron = 0.5 (max) (@VGS = -4 V) : Ron = 0.7 (max) (@VGS = -2.5 V) Low-voltage operation possible Absolute Maximum Ratings

MOSTRAR MÁS

Otros transistores... HN1K03FU , HN1K04FU , HN1K05FU , HN1K06FU , HN1L02FU , HN1L03FU , HN4K03JU , SSM3J01F , IRFB4115 , SSM3J02F , SSM3J02T , SSM3J05FU , SSM3J09FU , SSM3J108TU , SSM3J109TU , SSM3J110TU , SSM3J111TU .

History: AON6526 | SVF7N65CD | SVF7N60F | FNK10N25B | SIR418DP | WMB048NV6HG4

 

 
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