SSM3J01T - аналоги и даташиты транзистора

 

SSM3J01T - Даташиты. Аналоги. Основные параметры


   Наименование производителя: SSM3J01T
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 1.7 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 94 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.4 Ohm
   Тип корпуса: TSM

 Аналог (замена) для SSM3J01T

 

SSM3J01T Datasheet (PDF)

 ..1. Size:207K  toshiba
ssm3j01t.pdfpdf_icon

SSM3J01T

SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T Power Management Switch Unit mm High Speed Switching Applications Small Package Low on Resistance Ron = 0.4 (max) (@VGS = -4 V) Ron = 0.6 (max) (@VGS = -2.5 V) Low Gate Threshold Voltage Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source

 7.1. Size:312K  toshiba
ssm3j01f.pdfpdf_icon

SSM3J01T

SSM3J01F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01F High Speed Switching Applications Unit mm Small package Low on resistance Ron = 0.4 (max) (VGS = -4 V) Ron = 0.6 (max) (VGS = -2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDS -30 V Gate-so

 8.1. Size:319K  toshiba
ssm3j02f.pdfpdf_icon

SSM3J01T

SSM3J02F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02F Power Management Switch Unit mm High Speed Switching Applications Small package Low on resistance Ron = 0.5 (max) (@VGS = -4 V) Ron = 0.7 (max) (@VGS = -2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source

 8.2. Size:184K  toshiba
ssm3j02t.pdfpdf_icon

SSM3J01T

SSM3J02T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02T Power Management Switch Unit mm High Speed Switching Applications Component package suitable for high-density mounting Small Package Low ON Resistance Ron = 0.5 (max) (@VGS = -4 V) Ron = 0.7 (max) (@VGS = -2.5 V) Low-voltage operation possible Absolute Maximum Ratings

Другие MOSFET... HN1K03FU , HN1K04FU , HN1K05FU , HN1K06FU , HN1L02FU , HN1L03FU , HN4K03JU , SSM3J01F , IRF3710 , SSM3J02F , SSM3J02T , SSM3J05FU , SSM3J09FU , SSM3J108TU , SSM3J109TU , SSM3J110TU , SSM3J111TU .

History: PSMN8R5-100ES | SSS2N80A | MTP452L3 | AP4409GEP | ZVN4306GTC | SST70R190S3

 

 
Back to Top

 


 
.