SSM3J09FU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM3J09FU
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.15 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 14 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.7 Ohm
Paquete / Cubierta: SOT323 SC70 USM
Búsqueda de reemplazo de MOSFET SSM3J09FU
Principales características: SSM3J09FU
ssm3j09fu.pdf
SSM3J09FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J09FU Management Switch Unit mm High Speed Switching Applications Small package Low on resistance Ron = 2.7 (max) (@VGS = -10 V) Ron = 4.2 (max) (@VGS = -4 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -30 V Gate-Source voltage
ssm3j01t.pdf
SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T Power Management Switch Unit mm High Speed Switching Applications Small Package Low on Resistance Ron = 0.4 (max) (@VGS = -4 V) Ron = 0.6 (max) (@VGS = -2.5 V) Low Gate Threshold Voltage Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source
ssm3j02f.pdf
SSM3J02F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02F Power Management Switch Unit mm High Speed Switching Applications Small package Low on resistance Ron = 0.5 (max) (@VGS = -4 V) Ron = 0.7 (max) (@VGS = -2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source
ssm3j02t.pdf
SSM3J02T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02T Power Management Switch Unit mm High Speed Switching Applications Component package suitable for high-density mounting Small Package Low ON Resistance Ron = 0.5 (max) (@VGS = -4 V) Ron = 0.7 (max) (@VGS = -2.5 V) Low-voltage operation possible Absolute Maximum Ratings
Otros transistores... HN1L02FU , HN1L03FU , HN4K03JU , SSM3J01F , SSM3J01T , SSM3J02F , SSM3J02T , SSM3J05FU , 2N7000 , SSM3J108TU , SSM3J109TU , SSM3J110TU , SSM3J111TU , SSM3J112TU , SSM3J113TU , SSM3J114TU , SSM3J115TU .
History: SI1056X
History: SI1056X
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