SSM3J09FU - параметры транзистора MOSFET, его аналоги, datasheet

SSM3J09FU Datasheet (PDF)

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SSM3J09FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J09FU Management Switch Unit: mmHigh Speed Switching Applications Small package Low on resistance: Ron = 2.7 (max) (@VGS = -10 V) : Ron = 4.2 (max) (@VGS = -4 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS -30 VGate-Source voltage

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SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T Power Management Switch Unit: mmHigh Speed Switching Applications Small Package Low on Resistance: Ron = 0.4 (max) (@VGS = -4 V) : Ron = 0.6 (max) (@VGS = -2.5 V) Low Gate Threshold Voltage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source

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SSM3J02F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02F Power Management Switch Unit: mmHigh Speed Switching Applications Small package Low on resistance : Ron = 0.5 (max) (@VGS = -4 V) : Ron = 0.7 (max) (@VGS = -2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source

8.3. Size:184K toshiba
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SSM3J02T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02T Power Management Switch Unit: mmHigh Speed Switching Applications Component package suitable for high-density mounting Small Package Low ON Resistance : Ron = 0.5 (max) (@VGS = -4 V) : Ron = 0.7 (max) (@VGS = -2.5 V) Low-voltage operation possible Absolute Maximum Ratings