SSM3J114TU Todos los transistores

SSM3J114TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J114TU High-Speed Switching Applications Power Management Switch Applications Unit mm 1.5 V drive 2.1 0.1 Low on-resistance Ron = 526 m (max) (@ VGS = -1.5 V) 1.7 0.1 Ron = 321 m (max) (@ VGS = -1.8 V) Ron = 199 m (max) (@ VGS = -2.5 V) 1 Ron = 149 m (max) (@ VGS = -

SSM3J115TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J115TU High-Speed Switching Applications Power Management Switch Applications Unit mm 2.1 0.1 1.5 V drive 1.7 0.1 Low ON-resistance Ron = 353 m (max) (@VGS = -1.5 V) Ron = 193 m (max) (@VGS = -1.8 V) Ron = 125 m (max) (@VGS = -2.5 V) 1 Ron = 98 m (max) (@VGS = -4.0 V) 3 Ab

SSM3J110TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J110TU High Speed Switching Applications 1.8V drive Unit mm Low on-resistance Ron = 240m (max) (@VGS = -1.8 V) Ron = 145m (max) (@VGS = -2.5 V) 2.1 0.1 Ron = 94m (max) (@VGS = -4.0 V) 1.7 0.1 Absolute Maximum Ratings (Ta = 25 C) 1 Characteristic Symbol Rating Unit 3 2 Drain-Sou

SSM3J113TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J113TU High Speed Switching Applications 2.0V drive Unit mm Low on-resistance Ron = 449m (max) (@VGS = -2.0 V) 2.1 0.1 Ron = 249m (max) (@VGS = -2.5 V) 1.7 0.1 Ron = 169m (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25 C) 1 Characteristic Symbol Rating Unit 3 2 Drain-

SSM3J118TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J118TU High-Speed Switching Applications 4 V drive Unit mm Low ON-resistance Ron = 480 m (max) (@VGS = -4 V) 2.1 0.1 Ron = 240 m (max) (@VGS = -10 V) 1.7 0.1 Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit 1 Drain source voltage VDS -30 V 3 2 Gate sour

SSM3J117TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J117TU High-Speed Switching Applications 4 V drive Unit mm Low ON-resistance Ron = 225 m (max) (@VGS = -4 V) 2.1 0.1 Ron = 117 m (max) (@VGS = -10 V) 1.7 0.1 Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit 1 Drain source voltage VDS -30 V 3 2 Gate sour

SSM3J112TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J112TU High Speed Switching Applications Unit mm 4V drive 2.1 0.1 Low on-resistance Ron = 790m (max) (@VGS = -4 V) 1.7 0.1 Ron = 390m (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta = 25 C) 1 Characteristic Symbol Rating Unit 3 2 Drain-Source voltage VDS -30 V Gate-Source volta

SSM3J111TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J111TU High Speed Switching Applications Unit mm 2.5V drive 2.1 0.1 Low on-resistance Ron = 480m (max) (@VGS = -4 V) 1.7 0.1 Ron = 680m (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25 C) 1 3 2 Characteristic Symbol Rating Unit Drain-Source voltage VDS -20 V Gate-Source vol