Справочник MOSFET. SSM3J114TU

 

SSM3J114TU MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSM3J114TU
   Маркировка: JJ7
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 7.7 nC
   Cossⓘ - Выходная емкость: 48 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.149 Ohm
   Тип корпуса: UFM

 Аналог (замена) для SSM3J114TU

 

 

SSM3J114TU Datasheet (PDF)

 ..1. Size:178K  toshiba
 ssm3j114tu.pdf

SSM3J114TU SSM3J114TU

SSM3J114TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J114TU High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.5 V drive 2.10.1 Low on-resistanceRon = 526 m (max) (@ VGS = -1.5 V) 1.70.1 Ron = 321 m (max) (@ VGS = -1.8 V) Ron = 199 m (max) (@ VGS = -2.5 V) 1Ron = 149 m (max) (@ VGS = -

 7.1. Size:144K  toshiba
 ssm3j115tu.pdf

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SSM3J115TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J115TU High-Speed Switching Applications Power Management Switch Applications Unit: mm2.10.1 1.5 V drive 1.70.1 Low ON-resistance: Ron = 353 m (max) (@VGS = -1.5 V) Ron = 193 m (max) (@VGS = -1.8 V) Ron = 125 m (max) (@VGS = -2.5 V) 1Ron = 98 m (max) (@VGS = -4.0 V) 3Ab

 7.2. Size:147K  toshiba
 ssm3j110tu.pdf

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SSM3J110TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J110TU High Speed Switching Applications 1.8V driveUnit: mm Low on-resistance: Ron = 240m (max) (@VGS = -1.8 V) Ron = 145m (max) (@VGS = -2.5 V) 2.10.1Ron = 94m (max) (@VGS = -4.0 V) 1.70.1Absolute Maximum Ratings (Ta = 25C) 1Characteristic Symbol Rating Unit32Drain-Sou

 7.3. Size:133K  toshiba
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SSM3J113TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J113TU High Speed Switching Applications 2.0V driveUnit: mm Low on-resistance: Ron = 449m (max) (@VGS = -2.0 V) 2.10.1Ron = 249m (max) (@VGS = -2.5 V) 1.70.1Ron = 169m (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25C) 1Characteristic Symbol Rating Unit32Drain-

 7.4. Size:136K  toshiba
 ssm3j118tu.pdf

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SSM3J118TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J118TU High-Speed Switching Applications 4 V drive Unit: mm Low ON-resistance: Ron = 480 m (max) (@VGS = -4 V) 2.10.1Ron = 240 m (max) (@VGS = -10 V) 1.70.1Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit1Drainsource voltage VDS -30 V32Gatesour

 7.5. Size:111K  toshiba
 ssm3j117tu.pdf

SSM3J114TU SSM3J114TU

SSM3J117TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J117TU High-Speed Switching Applications 4 V drive Unit: mm Low ON-resistance: Ron = 225 m (max) (@VGS = -4 V) 2.10.1Ron = 117 m (max) (@VGS = -10 V) 1.70.1Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit1Drainsource voltage VDS -30 V32Gatesour

 7.6. Size:136K  toshiba
 ssm3j112tu.pdf

SSM3J114TU SSM3J114TU

SSM3J112TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J112TU High Speed Switching Applications Unit: mm 4V drive2.10.1 Low on-resistance: Ron = 790m (max) (@VGS = -4 V) 1.70.1Ron = 390m (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta = 25C) 1Characteristic Symbol Rating Unit32Drain-Source voltage VDS -30 VGate-Source volta

 7.7. Size:255K  toshiba
 ssm3j111tu.pdf

SSM3J114TU SSM3J114TU

SSM3J111TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J111TU High Speed Switching Applications Unit: mm 2.5V drive 2.10.1 Low on-resistance: Ron = 480m (max) (@VGS = -4 V) 1.70.1Ron = 680m (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) 132Characteristic Symbol Rating UnitDrain-Source voltage VDS -20 VGate-Source vol

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