SSM3J13T Todos los transistores

 

SSM3J13T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSM3J13T
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 288 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: TSM
     - Selección de transistores por parámetros

 

SSM3J13T Datasheet (PDF)

 ..1. Size:199K  toshiba
 ssm3j13t.pdf pdf_icon

SSM3J13T

SSM3J13T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM3J13T Power Management Switch Unit: mmHigh Speed Switching Applications Small Package Low on Resistance: Ron = 70 m (max) (@VGS = -4 V) : Ron = 95 m (max) (@VGS = -2.5 V) Low Gate Threshold Voltage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDr

 7.1. Size:202K  toshiba
 ssm3j134tu.pdf pdf_icon

SSM3J13T

SSM3J134TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM3J134TU Power Management Switch Applications 1.5 V drive Unit: mm Low ON-resistance: RDS(ON) = 240 m (max) (@VGS = -1.5 V) RDS(ON) = 168 m (max) (@VGS = -1.8 V) RDS(ON) = 123 m (max) (@VGS = -2.5 V) RDS(ON) = 93 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25

 7.2. Size:208K  toshiba
 ssm3j132tu.pdf pdf_icon

SSM3J13T

SSM3J132TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM3J132TU Power Management Switch Applications 1.2-V driveUnit: mm Low ON-resistance: RDS(ON) = 94 m (max) (@VGS = -1.2 V) RDS(ON) = 39 m (max) (@VGS = -1.5 V) RDS(ON) = 29 m (max) (@VGS = -1.8 V) RDS(ON) = 21 m (max) (@VGS = -2.5 V) RDS(ON) = 17 m (max) (@VGS = -4.5

 7.3. Size:186K  toshiba
 ssm3j130tu.pdf pdf_icon

SSM3J13T

SSM3J130TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM3J130TU Power Management Switch Applications 1.5 V drive Unit: mm Low ON-resistance:RDS(ON) = 63.2 m (max) (@VGS = -1.5 V) RDS(ON) = 41.1 m (max) (@VGS = -1.8 V) 2.10.1RDS(ON) = 31.0 m (max) (@VGS = -2.5 V) 1.70.1RDS(ON) = 25.8 m (max) (@VGS = -4.5 V) 1Absolu

MOSTRAR MÁS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 2SK1968 | PTA20N60 | PMPB24EP | SSM4920M | R6511ENX | 2N6904 | 2SK1447

 

 
Back to Top

 


 
.