SSM3J305T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SSM3J305T Datasheet (PDF)

..1. Size:173K toshiba
ssm3j305t.pdf pdf_icon

SSM3J305T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J305T High-Speed Switching Applications Unit: mm 4 V drive Low ON-resistance: Ron = 477 m (max) (@VGS = -4 V) Ron = 237 m (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrainsource voltage VDS -30 VGatesource voltage VGSS 20 VDC ID

7.1. Size:173K toshiba
ssm3j306t.pdf pdf_icon

SSM3J306T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J306T Power management switch Applications 4 V drive Unit: mm Low ON-resistance: Ron = 225 m (max) (@VGS = -4 V) Ron = 117 m (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrainsource voltage VDS -30 VGatesource voltage VGSS 20 VDC

7.2. Size:207K toshiba
ssm3j307t.pdf pdf_icon

SSM3J307T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV) SSM3J307T Power Management Switch Applications High-Speed Switching Applications Unit: mm+0.2 1.5 V drive 2.8-0.3 Low ON-resistance: Ron = 83 m (max) (@VGS = -1.5 V) +0.21.6-0.1Ron = 56 m (max) (@VGS = -1.8 V) Ron = 40 m (max) (@VGS = -2.5 V) Ron = 31 m (max) (@VGS = -4.

7.3. Size:243K toshiba
ssm3j304t.pdf pdf_icon

SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T Power Management Switch Applications High-Speed Switching Applications Unit: mm 1.8-V drive Low ON-resistance: RDS(ON) = 297 m (max) (@VGS = -1.8 V) RDS(ON) = 168 m (max) (@VGS = -2.5 V) RDS(ON) = 127 m (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25C) Character

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .