SSM3J305T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM3J305T

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 39 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.237 Ohm

Encapsulados: TSM

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SSM3J305T datasheet

 ..1. Size:173K  toshiba
 ssm3j305t.pdf pdf_icon

SSM3J305T

SSM3J305T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J305T High-Speed Switching Applications Unit mm 4 V drive Low ON-resistance Ron = 477 m (max) (@VGS = -4 V) Ron = 237 m (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain source voltage VDS -30 V Gate source voltage VGSS 20 V DC ID

 7.1. Size:173K  toshiba
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SSM3J305T

SSM3J306T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J306T Power management switch Applications 4 V drive Unit mm Low ON-resistance Ron = 225 m (max) (@VGS = -4 V) Ron = 117 m (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain source voltage VDS -30 V Gate source voltage VGSS 20 V DC

 7.2. Size:207K  toshiba
 ssm3j307t.pdf pdf_icon

SSM3J305T

SSM3J307T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV) SSM3J307T Power Management Switch Applications High-Speed Switching Applications Unit mm +0.2 1.5 V drive 2.8-0.3 Low ON-resistance Ron = 83 m (max) (@VGS = -1.5 V) +0.2 1.6-0.1 Ron = 56 m (max) (@VGS = -1.8 V) Ron = 40 m (max) (@VGS = -2.5 V) Ron = 31 m (max) (@VGS = -4.

 7.3. Size:243K  toshiba
 ssm3j304t.pdf pdf_icon

SSM3J305T

SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T Power Management Switch Applications High-Speed Switching Applications Unit mm 1.8-V drive Low ON-resistance RDS(ON) = 297 m (max) (@VGS = -1.8 V) RDS(ON) = 168 m (max) (@VGS = -2.5 V) RDS(ON) = 127 m (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25 C) Character

MOSTRAR MÁS

Otros transistores... SSM3J15FU, SSM3J15FV, SSM3J15F, SSM3J16CT, SSM3J16FS, SSM3J16FU, SSM3J16FV, SSM3J304T, NCEP15T14, SSM3J306T, SSM3J307T, SSM3J312T, SSM3J313T, SSM3J314T, SSM3J317T, SSM3J321T, SSM3J325F