SSM3J312T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM3J312T

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 2.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 170 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.091 Ohm

Encapsulados: TSM

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SSM3J312T datasheet

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 ssm3j312t.pdf pdf_icon

SSM3J312T

SSM3J312T TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J312T High Speed Switching Applications Power Management Switch Applications Unit mm 1.8V drive Low on-resistance Ron = 237m (max) (@VGS = -1.8 V) +0.2 Ron = 142m (max) (@VGS = -2.5 V) 2.8-0.3 Ron = 91m (max) (@VGS = -4.0 V) +0.2 1.6-0.1 Absolute Maximum Ratings (Ta = 25 C) Charac

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 ssm3j317t.pdf pdf_icon

SSM3J312T

SSM3J317T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J317T Power Management Switch Applications High-Speed Switching Applications Unit mm 1.8-V drive Low ON-resistance Ron = 306 m (max) (@VGS = -1.8 V) +0.2 2.8-0.3 Ron = 144 m (max) (@VGS = -2.8 V) +0.2 Ron = 107 m (max) (@VGS = -4.5 V) 1.6-0.1 Absolute Maximum Ratings (Ta =

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SSM3J312T

SSM3J314T TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J314T High Speed Switching Applications Unit mm 4.0V drive +0.2 Low ON-resistance Ron = 100m (max) (@VGS = -4.0 V) 2.8-0.3 Ron = 54m (max) (@VGS = -10 V) +0.2 1.6-0.1 Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS -30

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SSM3J312T

MOSTRAR MÁS

Otros transistores... SSM3J16CT, SSM3J16FS, SSM3J16FU, SSM3J16FV, SSM3J304T, SSM3J305T, SSM3J306T, SSM3J307T, IRFP450, SSM3J313T, SSM3J314T, SSM3J317T, SSM3J321T, SSM3J325F, SSM3J326T, SSM3J327F, SSM3J327R