SSM3J312T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSM3J312T
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 2.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.091 Ohm
   Paquete / Cubierta: TSM

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SSM3J312T Datasheet (PDF)

..1. Size:177K toshiba
ssm3j312t.pdf

SSM3J312T TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J312T High Speed Switching Applications Power Management Switch Applications Unit: mm 1.8V drive Low on-resistance: Ron = 237m (max) (@VGS = -1.8 V) +0.2Ron = 142m (max) (@VGS = -2.5 V) 2.8-0.3Ron = 91m (max) (@VGS = -4.0 V) +0.21.6-0.1Absolute Maximum Ratings (Ta = 25C) Charac

7.1. Size:211K toshiba
ssm3j317t.pdf

SSM3J317T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J317T Power Management Switch Applications High-Speed Switching Applications Unit: mm 1.8-V drive Low ON-resistance: Ron = 306 m (max) (@VGS = -1.8 V) +0.22.8-0.3: Ron = 144 m (max) (@VGS = -2.8 V) +0.2: Ron = 107 m (max) (@VGS = -4.5 V) 1.6-0.1Absolute Maximum Ratings (Ta =

7.2. Size:202K toshiba
ssm3j314t.pdf

SSM3J314T TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J314T High Speed Switching Applications Unit: mm 4.0V drive +0.2 Low ON-resistance: Ron = 100m (max) (@VGS = -4.0 V) 2.8-0.3Ron = 54m (max) (@VGS = -10 V) +0.21.6-0.1Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS -30

7.3. Size:204K toshiba
ssm3j313t.pdf

SSM3J313T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J313T Power Management Switch Applications High-Speed Switching Applications Unit: mm+0.2 1.8V drive 2.8-0.3 Low ON-resistance: Ron = 640m (max) (@VGS = -1.8 V) +0.21.6-0.1Ron = 396m (max) (@VGS = -2.5 V) Ron = 268m (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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