All MOSFET. SSM3J312T Datasheet

 

SSM3J312T MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSM3J312T
   Marking Code: JJ3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 2.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.5 nC
   Cossⓘ - Output Capacitance: 170 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.091 Ohm
   Package: TSM

 SSM3J312T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSM3J312T Datasheet (PDF)

 ..1. Size:177K  toshiba
 ssm3j312t.pdf

SSM3J312T SSM3J312T

SSM3J312T TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J312T High Speed Switching Applications Power Management Switch Applications Unit: mm 1.8V drive Low on-resistance: Ron = 237m (max) (@VGS = -1.8 V) +0.2Ron = 142m (max) (@VGS = -2.5 V) 2.8-0.3Ron = 91m (max) (@VGS = -4.0 V) +0.21.6-0.1Absolute Maximum Ratings (Ta = 25C) Charac

 7.1. Size:211K  toshiba
 ssm3j317t.pdf

SSM3J312T SSM3J312T

SSM3J317T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J317T Power Management Switch Applications High-Speed Switching Applications Unit: mm 1.8-V drive Low ON-resistance: Ron = 306 m (max) (@VGS = -1.8 V) +0.22.8-0.3: Ron = 144 m (max) (@VGS = -2.8 V) +0.2: Ron = 107 m (max) (@VGS = -4.5 V) 1.6-0.1Absolute Maximum Ratings (Ta =

 7.2. Size:202K  toshiba
 ssm3j314t.pdf

SSM3J312T SSM3J312T

SSM3J314T TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J314T High Speed Switching Applications Unit: mm 4.0V drive +0.2 Low ON-resistance: Ron = 100m (max) (@VGS = -4.0 V) 2.8-0.3Ron = 54m (max) (@VGS = -10 V) +0.21.6-0.1Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS -30

 7.3. Size:204K  toshiba
 ssm3j313t.pdf

SSM3J312T SSM3J312T

SSM3J313T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J313T Power Management Switch Applications High-Speed Switching Applications Unit: mm+0.2 1.8V drive 2.8-0.3 Low ON-resistance: Ron = 640m (max) (@VGS = -1.8 V) +0.21.6-0.1Ron = 396m (max) (@VGS = -2.5 V) Ron = 268m (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25

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