SSM3J313T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM3J313T
Código: KDT
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 1.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 VQgⓘ - Carga de la puerta: 3.3 nC
Cossⓘ - Capacitancia de salida: 32 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.268 Ohm
Paquete / Cubierta: TSM
Búsqueda de reemplazo de MOSFET SSM3J313T
SSM3J313T Datasheet (PDF)
ssm3j313t.pdf
SSM3J313T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J313T Power Management Switch Applications High-Speed Switching Applications Unit: mm+0.2 1.8V drive 2.8-0.3 Low ON-resistance: Ron = 640m (max) (@VGS = -1.8 V) +0.21.6-0.1Ron = 396m (max) (@VGS = -2.5 V) Ron = 268m (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25
ssm3j312t.pdf
SSM3J312T TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J312T High Speed Switching Applications Power Management Switch Applications Unit: mm 1.8V drive Low on-resistance: Ron = 237m (max) (@VGS = -1.8 V) +0.2Ron = 142m (max) (@VGS = -2.5 V) 2.8-0.3Ron = 91m (max) (@VGS = -4.0 V) +0.21.6-0.1Absolute Maximum Ratings (Ta = 25C) Charac
ssm3j317t.pdf
SSM3J317T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J317T Power Management Switch Applications High-Speed Switching Applications Unit: mm 1.8-V drive Low ON-resistance: Ron = 306 m (max) (@VGS = -1.8 V) +0.22.8-0.3: Ron = 144 m (max) (@VGS = -2.8 V) +0.2: Ron = 107 m (max) (@VGS = -4.5 V) 1.6-0.1Absolute Maximum Ratings (Ta =
ssm3j314t.pdf
SSM3J314T TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J314T High Speed Switching Applications Unit: mm 4.0V drive +0.2 Low ON-resistance: Ron = 100m (max) (@VGS = -4.0 V) 2.8-0.3Ron = 54m (max) (@VGS = -10 V) +0.21.6-0.1Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS -30
Otros transistores... SSM3J16FS , SSM3J16FU , SSM3J16FV , SSM3J304T , SSM3J305T , SSM3J306T , SSM3J307T , SSM3J312T , HY1906P , SSM3J314T , SSM3J317T , SSM3J321T , SSM3J325F , SSM3J326T , SSM3J327F , SSM3J327R , SSM3J328R .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F