SSM3J313T Specs and Replacement

Type Designator: SSM3J313T

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 32 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.268 Ohm

Package: TSM

SSM3J313T substitution

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SSM3J313T datasheet

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SSM3J313T

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SSM3J313T

SSM3J312T TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J312T High Speed Switching Applications Power Management Switch Applications Unit mm 1.8V drive Low on-resistance Ron = 237m (max) (@VGS = -1.8 V) +0.2 Ron = 142m (max) (@VGS = -2.5 V) 2.8-0.3 Ron = 91m (max) (@VGS = -4.0 V) +0.2 1.6-0.1 Absolute Maximum Ratings (Ta = 25 C) Charac... See More ⇒

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SSM3J313T

SSM3J317T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J317T Power Management Switch Applications High-Speed Switching Applications Unit mm 1.8-V drive Low ON-resistance Ron = 306 m (max) (@VGS = -1.8 V) +0.2 2.8-0.3 Ron = 144 m (max) (@VGS = -2.8 V) +0.2 Ron = 107 m (max) (@VGS = -4.5 V) 1.6-0.1 Absolute Maximum Ratings (Ta =... See More ⇒

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SSM3J313T

SSM3J314T TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J314T High Speed Switching Applications Unit mm 4.0V drive +0.2 Low ON-resistance Ron = 100m (max) (@VGS = -4.0 V) 2.8-0.3 Ron = 54m (max) (@VGS = -10 V) +0.2 1.6-0.1 Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS -30 ... See More ⇒

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Detailed specifications: SSM3J16FS, SSM3J16FU, SSM3J16FV, SSM3J304T, SSM3J305T, SSM3J306T, SSM3J307T, SSM3J312T, TK10A60D, SSM3J314T, SSM3J317T, SSM3J321T, SSM3J325F, SSM3J326T, SSM3J327F, SSM3J327R, SSM3J328R

Keywords - SSM3J313T MOSFET specs

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