SSM3J321T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SSM3J321T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V) SSM3J321T Power Management Switch Applications High-Speed Switching Applications 1.5V drive Unit: mm Low ON-resistance: Ron = 137m (max) (@VGS = -1.5 V) +0.2Ron = 88m (max) (@VGS = -1.8 V) 2.8-0.3Ron = 62m (max) (@VGS = -2.5 V) +0.21.6-0.1Ron = 46m (max) (@VGS = -4.5

SSM3J325F TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM3J325F Power Management Switch Applications Unit: mm +0.5 1.5-V drive 2.5-0.3+0.25 Low ON-resistance: R = 311 m (max) (@V = -1.5 V) DS(ON) GS1.5-0.15 R = 231 m (max) (@V = -1.8 V) DS(ON) GS R = 179 m (max) (@V = -2.5 V) DS(ON) GS1 R = 150 m (max) (@V = -4.5 V)

SSM3J328R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM3J328R Power Management Switch Applications Unit: mm+0.08 1.5-V drive0.42+0.08-0.050.170.05M A -0.07 Low ON-resistance: RDS(ON) = 88.4m (max) (@VGS = -1.5 V) 3RDS(ON) = 56.0m (max) (@VGS = -1.8 V) RDS(ON) = 39.7m (max) (@VGS = -2.5 V) RDS(ON) = 29.8m (max) (@V

SSM3J327Rwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIO