SSM3J328R Todos los transistores

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 ssm3j328r.pdf

SSM3J328R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM3J328R Power Management Switch Applications Unit mm +0.08 1.5-V drive 0.42 +0.08 -0.05 0.17 0.05 M A -0.07 Low ON-resistance RDS(ON) = 88.4m (max) (@VGS = -1.5 V) 3 RDS(ON) = 56.0m (max) (@VGS = -1.8 V) RDS(ON) = 39.7m (max) (@VGS = -2.5 V) RDS(ON) = 29.8m (max) (@V

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 ssm3j325f.pdf

SSM3J325F TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM3J325F Power Management Switch Applications Unit mm +0.5 1.5-V drive 2.5-0.3 +0.25 Low ON-resistance R = 311 m (max) (@V = -1.5 V) DS(ON) GS 1.5-0.15 R = 231 m (max) (@V = -1.8 V) DS(ON) GS R = 179 m (max) (@V = -2.5 V) DS(ON) GS 1 R = 150 m (max) (@V = -4.5 V)

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 ssm3j326t..pdf

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 ssm3j321t.pdf

SSM3J321T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V) SSM3J321T Power Management Switch Applications High-Speed Switching Applications 1.5V drive Unit mm Low ON-resistance Ron = 137m (max) (@VGS = -1.5 V) +0.2 Ron = 88m (max) (@VGS = -1.8 V) 2.8-0.3 Ron = 62m (max) (@VGS = -2.5 V) +0.2 1.6-0.1 Ron = 46m (max) (@VGS = -4.5

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 ssm3j327r.pdf

SSM3J327R www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIO