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SSM3J36MFV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSM3J36MFV
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.33 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 10.3 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.31 Ohm
   Paquete / Cubierta: SOT723 VESM
 

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SSM3J36MFV Datasheet (PDF)

 ..1. Size:161K  toshiba
 ssm3j36mfv.pdf pdf_icon

SSM3J36MFV

SSM3J36MFV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J36MFV Power Management Switches 1.5-V drive Unit: mm Low ON-resistance: Ron = 3.60 (max) (@VGS = -1.5 V) : Ron = 2.70 (max) (@VGS = -1.8 V) 1.20.05 : Ron = 1.60 (max) (@VGS = -2.8 V) : Ron = 1.31 (max) (@VGS = -4.5 V) 0.80.05 Absolute Maximum Ratings (Ta = 25 C) 1 Ch

 7.1. Size:184K  toshiba
 ssm3j36fs.pdf pdf_icon

SSM3J36MFV

SSM3J36FS TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J36FS Power Management Switches 1.5-V drive Unit: mm Low ON-resistance: Ron = 3.60 (max) (@VGS = -1.5 V) : Ron = 2.70 (max) (@VGS = -1.8 V) : Ron = 1.60 (max) (@VGS = -2.8 V) : Ron = 1.31 (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating

 7.2. Size:180K  toshiba
 ssm3j36tu.pdf pdf_icon

SSM3J36MFV

SSM3J36TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J36TU Power Management Switches 1.5-V drive Unit: mm Low ON-resistance: Ron = 3.60 (max) (@VGS = -1.5 V) : Ron = 2.70 (max) (@VGS = -1.8 V) 2.10.1: Ron = 1.60 (max) (@VGS = -2.8 V) 1.70.1: Ron = 1.31 (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25 C) 132

 7.3. Size:784K  cn vbsemi
 ssm3j36fs.pdf pdf_icon

SSM3J36MFV

SSM3J36FSwww.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) ()ID (A) Qg (TYP.) (nC) 100 % R tested0.450 at VGS = -4.5 V -0.55 Fast switching speed-20 0.500 at VGS = -2.5 V -0.50 10.600 at VGS = -1.8 V -0.38APPLICATIONS Load / power switch for portabledevicesS Drivers: relays, solenoids, display

MOSTRAR MÁS

Otros transistores... SSM3J327R , SSM3J328R , SSM3J332R , SSM3J334R , SSM3J35CT , SSM3J35FS , SSM3J35MFV , SSM3J36FS , IRFB31N20D , SSM3J36TU , SSM3J46CTB , SSM3J56MFV , SSM3K01F , SSM3K01T , SSM3K02F , SSM3K02T , SSM3K05FU .

History: IPD031N03L

 

 
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