SSM3J36TU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM3J36TU

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 0.33 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 10.3 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.31 Ohm

Encapsulados: UFM

 Búsqueda de reemplazo de SSM3J36TU MOSFET

- Selecciónⓘ de transistores por parámetros

 

SSM3J36TU datasheet

 ..1. Size:180K  toshiba
 ssm3j36tu.pdf pdf_icon

SSM3J36TU

SSM3J36TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J36TU Power Management Switches 1.5-V drive Unit mm Low ON-resistance Ron = 3.60 (max) (@VGS = -1.5 V) Ron = 2.70 (max) (@VGS = -1.8 V) 2.1 0.1 Ron = 1.60 (max) (@VGS = -2.8 V) 1.7 0.1 Ron = 1.31 (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25 C) 1 3 2

 7.1. Size:184K  toshiba
 ssm3j36fs.pdf pdf_icon

SSM3J36TU

SSM3J36FS TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J36FS Power Management Switches 1.5-V drive Unit mm Low ON-resistance Ron = 3.60 (max) (@VGS = -1.5 V) Ron = 2.70 (max) (@VGS = -1.8 V) Ron = 1.60 (max) (@VGS = -2.8 V) Ron = 1.31 (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating

 7.2. Size:161K  toshiba
 ssm3j36mfv.pdf pdf_icon

SSM3J36TU

SSM3J36MFV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J36MFV Power Management Switches 1.5-V drive Unit mm Low ON-resistance Ron = 3.60 (max) (@VGS = -1.5 V) Ron = 2.70 (max) (@VGS = -1.8 V) 1.2 0.05 Ron = 1.60 (max) (@VGS = -2.8 V) Ron = 1.31 (max) (@VGS = -4.5 V) 0.8 0.05 Absolute Maximum Ratings (Ta = 25 C) 1 Ch

 7.3. Size:784K  cn vbsemi
 ssm3j36fs.pdf pdf_icon

SSM3J36TU

SSM3J36FS www.VBsemi.tw P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (TYP.) (nC) 100 % R tested 0.450 at VGS = -4.5 V -0.55 Fast switching speed -20 0.500 at VGS = -2.5 V -0.50 1 0.600 at VGS = -1.8 V -0.38 APPLICATIONS Load / power switch for portable devices S Drivers relays, solenoids, display

MOSTRAR MÁS

Otros transistores... SSM3J328R, SSM3J332R, SSM3J334R, SSM3J35CT, SSM3J35FS, SSM3J35MFV, SSM3J36FS, SSM3J36MFV, STF13NM60N, SSM3J46CTB, SSM3J56MFV, SSM3K01F, SSM3K01T, SSM3K02F, SSM3K02T, SSM3K05FU, SSM3K09FU