SSM3K01F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM3K01F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 1.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 102 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm

Encapsulados: SOT346 SC59 SMINI

 Búsqueda de reemplazo de SSM3K01F MOSFET

- Selecciónⓘ de transistores por parámetros

 

SSM3K01F datasheet

 ..1. Size:305K  toshiba
 ssm3k01f.pdf pdf_icon

SSM3K01F

SSM3K01F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01F High Speed Switching Applications Unit mm Small package Low on resistance Ron = 120 m (max) (VGS = 4 V) Ron = 150 m (max) (VGS = 2.5 V) Low gate threshold voltage Vth = 0.6 1.1 V (VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Uni

 7.1. Size:188K  toshiba
 ssm3k01t.pdf pdf_icon

SSM3K01F

SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T High Speed Switching Applications Unit mm Small Package Low on Resistance Ron = 120 m (max) (@VGS = 4 V) Ron = 150 m (max) (@VGS = 2.5 V) Low Gate Threshold Voltage Vth = 0.6 1.1 V (@VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating

 8.1. Size:312K  toshiba
 ssm3k05fu.pdf pdf_icon

SSM3K01F

SSM3K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K05FU High Speed Switching Applications Small package Unit mm Low on resistance Ron = 0.8 max (@VGS = 4 V) Ron = 1.2 max (@VGS = 2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source

 8.2. Size:210K  toshiba
 ssm3k09fu.pdf pdf_icon

SSM3K01F

SSM3K09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K09FU High Speed Switching Applications Unit mm Small package Low on resistance Ron = 0.7 (max) (@VGS = 10 V) Ron = 1.2 (max) (@VGS = 4 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS 20 V DC ID

MOSTRAR MÁS

Otros transistores... SSM3J35CT, SSM3J35FS, SSM3J35MFV, SSM3J36FS, SSM3J36MFV, SSM3J36TU, SSM3J46CTB, SSM3J56MFV, 8N60, SSM3K01T, SSM3K02F, SSM3K02T, SSM3K05FU, SSM3K09FU, SSM3K101TU, SSM3K102TU, SSM3K104TU