BUK109-50GS Todos los transistores

 ..1. Size:92K  philips
 buk109-50gs 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK109-50GS TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET in a 3 pin plastic surface mount VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 29 A purpose switch for automotive PD Total power

 4.1. Size:87K  philips
 buk109-50gl 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK109-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 V mount envelope, intended as a ID Continuous drain current 26 A general purpose switch for P

 5.1. Size:75K  philips
 buk109-50dl 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK109-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 V mount envelope, intended as a ID Continuous drain current 26 A general purpose switch for P

 9.1. Size:72K  philips
 buk108-50dl 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK108-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 V mount envelope, intended as a ID Continuous drain current 13.5 A general purpose switch for

 9.2. Size:72K  philips
 buk101-50dl 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK101-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 26 A purpose switch for automotive PD T

 9.3. Size:63K  philips
 buk107-50dl 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK107-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic overload protected logic SYMBOL PARAMETER MAX. UNIT level power MOSFET in a surface mount plastic envelope, intended as VDS Continuous drain source voltage 50 V a general purpose switch for automotive systems and other ID Continuous drain current

 9.4. Size:84K  philips
 buk102-50gl 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK102-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 45 A purpose switch for automotive PD T

 9.5. Size:90K  philips
 buk107 50ds hg 2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50DS PowerMOS transistor Logic level TOPFET March 1997 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a Philips Semiconductors Product specification PowerMOS transistor BUK107-50DS Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic overload protected logic SYMBOL PARAMETER MAX.

 9.6. Size:68K  philips
 buk100-50dl 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK100-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 13.5 A purpose switch for automotive PD

 9.7. Size:93K  philips
 buk108-50gs 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK108-50GS TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET in a 3 pin plastic surface mount VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 15 A purpose switch for automotive PD Total power

 9.8. Size:86K  philips
 buk102-50gs 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK102-50GS TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET in a 3 pin plastic envelope, intended VDS Continuous drain source voltage 50 V as a general purpose switch for ID Continuous drain current 50 A automotive systems and other PD Total p

 9.9. Size:62K  philips
 buk107-50ds 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK107-50DS Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic overload protected logic SYMBOL PARAMETER MAX. UNIT level power MOSFET in a surface mount plastic envelope, intended as VDS Continuous drain source voltage 50 V a general purpose switch for automotive systems and other ID Continuous drain current

 9.10. Size:101K  philips
 buk108-50gl 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK108-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 V mount envelope, intended as a ID Continuous drain current 13.5 A general purpose switch for

 9.11. Size:64K  philips
 buk107-50gl 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK107-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic overload protected logic SYMBOL PARAMETER MAX. UNIT level power MOSFET in a surface mount plastic envelope, intended as VDS Continuous drain source voltage 50 V a general purpose switch for automotive systems and other ID Continuous drain current

 9.12. Size:92K  philips
 buk107 50dl hg 2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50DL PowerMOS transistor Logic level TOPFET March 1997 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a Philips Semiconductors Product specification PowerMOS transistor BUK107-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic overload protected logic SYMBOL PARAMETER MAX.

 9.13. Size:87K  philips
 buk101-50gs.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK101-50GS TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET in a 3 pin plastic envelope, intended VDS Continuous drain source voltage 50 V as a general purpose switch for ID Continuous drain current 29 A automotive systems and other PD Total p

 9.14. Size:116K  philips
 buk104-50l-s 50lp-sp 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK104-50L/S Logic level TOPFET BUK104-50LP/SP DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 15 A purpose switch fo

 9.15. Size:69K  philips
 buk102-50dl 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK102-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 45 A purpose switch for automotive PD T

 9.16. Size:112K  philips
 buk106-50l-s 50lp-sp 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK106-50L/S Logic level TOPFET BUK106-50LP/SP DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 50 A purpose switch fo

 9.17. Size:152K  philips
 buk104-50s.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK104-50L/S Logic level TOPFET BUK104-50LP/SP DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 15 A purpose switch fo

 9.18. Size:84K  philips
 buk101-50gl.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK101-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 26 A purpose switch for automotive PD T

 9.19. Size:98K  philips
 buk100-50gl.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK100-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 13.5 A purpose switch for automotive PD

 9.20. Size:88K  philips
 buk100-50gs 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK100-50GS TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET in a 3 pin plastic envelope, intended VDS Continuous drain source voltage 50 V as a general purpose switch for ID Continuous drain current 15 A automotive systems and other PD Total p