BUK109-50GS - описание и поиск аналогов

Philips Semiconductors Product specification PowerMOS transistor BUK109-50GS TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET in a 3 pin plastic surface mount VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 29 A purpose switch for automotive PD Total power

Philips Semiconductors Product specification PowerMOS transistor BUK109-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 V mount envelope, intended as a ID Continuous drain current 26 A general purpose switch for P

Philips Semiconductors Product specification PowerMOS transistor BUK109-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 V mount envelope, intended as a ID Continuous drain current 26 A general purpose switch for P

Philips Semiconductors Product specification PowerMOS transistor BUK108-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 V mount envelope, intended as a ID Continuous drain current 13.5 A general purpose switch for

Philips Semiconductors Product specification PowerMOS transistor BUK101-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 26 A purpose switch for automotive PD T

Philips Semiconductors Product specification PowerMOS transistor BUK107-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic overload protected logic SYMBOL PARAMETER MAX. UNIT level power MOSFET in a surface mount plastic envelope, intended as VDS Continuous drain source voltage 50 V a general purpose switch for automotive systems and other ID Continuous drain current

Philips Semiconductors Product specification PowerMOS transistor BUK102-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 45 A purpose switch for automotive PD T

DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50DS PowerMOS transistor Logic level TOPFET March 1997 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a Philips Semiconductors Product specification PowerMOS transistor BUK107-50DS Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic overload protected logic SYMBOL PARAMETER MAX.

Philips Semiconductors Product specification PowerMOS transistor BUK100-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 13.5 A purpose switch for automotive PD

Philips Semiconductors Product specification PowerMOS transistor BUK108-50GS TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET in a 3 pin plastic surface mount VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 15 A purpose switch for automotive PD Total power

Philips Semiconductors Product specification PowerMOS transistor BUK102-50GS TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET in a 3 pin plastic envelope, intended VDS Continuous drain source voltage 50 V as a general purpose switch for ID Continuous drain current 50 A automotive systems and other PD Total p

Philips Semiconductors Product specification PowerMOS transistor BUK107-50DS Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic overload protected logic SYMBOL PARAMETER MAX. UNIT level power MOSFET in a surface mount plastic envelope, intended as VDS Continuous drain source voltage 50 V a general purpose switch for automotive systems and other ID Continuous drain current

Philips Semiconductors Product specification PowerMOS transistor BUK108-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 V mount envelope, intended as a ID Continuous drain current 13.5 A general purpose switch for

Philips Semiconductors Product specification PowerMOS transistor BUK107-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic overload protected logic SYMBOL PARAMETER MAX. UNIT level power MOSFET in a surface mount plastic envelope, intended as VDS Continuous drain source voltage 50 V a general purpose switch for automotive systems and other ID Continuous drain current

DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50DL PowerMOS transistor Logic level TOPFET March 1997 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a Philips Semiconductors Product specification PowerMOS transistor BUK107-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic overload protected logic SYMBOL PARAMETER MAX.

Philips Semiconductors Product specification PowerMOS transistor BUK101-50GS TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET in a 3 pin plastic envelope, intended VDS Continuous drain source voltage 50 V as a general purpose switch for ID Continuous drain current 29 A automotive systems and other PD Total p

Philips Semiconductors Product specification PowerMOS transistor BUK104-50L/S Logic level TOPFET BUK104-50LP/SP DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 15 A purpose switch fo

Philips Semiconductors Product specification PowerMOS transistor BUK102-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 45 A purpose switch for automotive PD T

Philips Semiconductors Product specification PowerMOS transistor BUK106-50L/S Logic level TOPFET BUK106-50LP/SP DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 50 A purpose switch fo

Philips Semiconductors Product specification PowerMOS transistor BUK104-50L/S Logic level TOPFET BUK104-50LP/SP DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 15 A purpose switch fo

Philips Semiconductors Product specification PowerMOS transistor BUK101-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 26 A purpose switch for automotive PD T

Philips Semiconductors Product specification PowerMOS transistor BUK100-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 13.5 A purpose switch for automotive PD

Philips Semiconductors Product specification PowerMOS transistor BUK100-50GS TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET in a 3 pin plastic envelope, intended VDS Continuous drain source voltage 50 V as a general purpose switch for ID Continuous drain current 15 A automotive systems and other PD Total p