SSM3K106TU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM3K106TU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 30 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.31 Ohm

Encapsulados: UFM

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SSM3K106TU datasheet

 ..1. Size:246K  toshiba
 ssm3k106tu.pdf pdf_icon

SSM3K106TU

SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications Unit mm 2.1 0.1 4 V drive 1.7 0.1 Low ON-resistance Ron = 530 m (max) (@VGS = 4 V) Ron = 310 m (max) (@VGS = 10 V) Lead (Pb)-free 1 2 3 Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain-source voltage VDS 20 V Gate-

 7.1. Size:148K  toshiba
 ssm3k104tu.pdf pdf_icon

SSM3K106TU

SSM3K104TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K104TU Power Management Switch Applications High-Speed Switching Applications Unit mm Unit mm 1.8 V drive Low ON-resistance Ron = 110 m (max) (@VGS = 1.8 V) 2.1 0.1 Ron = 74 m (max) (@VGS = 2.5 V) 1.7 0.1 Ron = 56 m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25 C) 1

 7.2. Size:366K  toshiba
 ssm3k107tu.pdf pdf_icon

SSM3K106TU

SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications Unit mm 4 V drive 2.1 0.1 Low ON-resistance Ron = 410 m (max) (@VGS = 4V) 1.7 0.1 Ron = 200 m (max) (@VGS = 10V) Lead(Pb)-free 1 2 3 Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain source voltage VDS 20 V Gate s

 7.3. Size:251K  toshiba
 ssm3k101tu.pdf pdf_icon

SSM3K106TU

SSM3K101TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K101TU High Speed Switching Applications Unit mm 1.8V drive 2.1 0.1 Low on-resistance Ron = 230m (max) (@VGS = 1.8 V) 1.7 0.1 Ron = 138m (max) (@VGS = 2.5 V) Ron = 103m (max) (@VGS = 4.0 V) Lead(Pb)-free 1 2 3 Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit

MOSTRAR MÁS

Otros transistores... SSM3K02F, SSM3K02T, SSM3K05FU, SSM3K09FU, SSM3K101TU, SSM3K102TU, SSM3K104TU, SSM3K105TU, IRF830, SSM3K107TU, SSM3K116TU, SSM3K119TU, SSM3K121TU, SSM3K122TU, SSM3K123TU, SSM3K124TU, SSM3K126TU