SSM3K106TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSM3K106TU
   Código: KK6
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.31 Ohm
   Paquete / Cubierta: UFM

Búsqueda de reemplazo de MOSFET SSM3K106TU

SSM3K106TU Datasheet (PDF)

..1. Size:246K toshiba
ssm3k106tu.pdf

SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications Unit: mm2.10.1 4 V drive 1.70.1 Low ON-resistance: Ron = 530 m (max) (@VGS = 4 V) Ron = 310 m (max) (@VGS = 10 V) Lead (Pb)-free 12 3Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrain-source voltage VDS 20 VGate-

7.1. Size:148K toshiba
ssm3k104tu.pdf

SSM3K104TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K104TU Power Management Switch Applications High-Speed Switching Applications Unit: mmUnit: mm 1.8 V drive Low ON-resistance: Ron = 110 m (max) (@VGS = 1.8 V) 2.10.1Ron = 74 m (max) (@VGS = 2.5 V) 1.70.1Ron = 56 m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25C) 1

7.2. Size:366K toshiba
ssm3k107tu.pdf

SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications Unit: mm 4 V drive2.10.1 Low ON-resistance: Ron = 410 m (max) (@VGS = 4V) 1.70.1Ron = 200 m (max) (@VGS = 10V) Lead(Pb)-free12 3Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrainsource voltage VDS 20 VGates

7.3. Size:251K toshiba
ssm3k101tu.pdf

SSM3K101TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K101TU High Speed Switching Applications Unit: mm 1.8V drive 2.10.1 Low on-resistance: Ron = 230m (max) (@VGS = 1.8 V) 1.70.1Ron = 138m (max) (@VGS = 2.5 V) Ron = 103m (max) (@VGS = 4.0 V) Lead(Pb)-free 12 3Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit

7.4. Size:251K toshiba
ssm3k102tu.pdf

SSM3K102TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K102TU High Speed Switching Applications Unit: mm 1.8V drive 2.10.1 Low on-resistance: Ron = 154m (max) (@VGS = 1.8 V) 1.70.1Ron = 99m (max) (@VGS = 2.5 V) Ron = 71m (max) (@VGS = 4.0 V) Lead(Pb)-free 12 3Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit

7.5. Size:350K toshiba
ssm3k105tu.pdf

SSM3K105TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K105TU High Speed Switching Applications Unit: mm 4V drive 2.10.1 Low on-resistance: Ron = 480m (max) (@VGS = 3.3V) 1.70.1Ron = 200m (max) (@VGS = 4V) Ron = 110m (max) (@VGS = 10V) Lead(Pb)-free 12 3Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrain-

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