SSM3K106TU Todos los transistores

 

SSM3K106TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSM3K106TU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.31 Ohm
   Paquete / Cubierta: UFM
 

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SSM3K106TU Datasheet (PDF)

 ..1. Size:246K  toshiba
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SSM3K106TU

SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications Unit: mm2.10.1 4 V drive 1.70.1 Low ON-resistance: Ron = 530 m (max) (@VGS = 4 V) Ron = 310 m (max) (@VGS = 10 V) Lead (Pb)-free 12 3Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrain-source voltage VDS 20 VGate-

 7.1. Size:148K  toshiba
 ssm3k104tu.pdf pdf_icon

SSM3K106TU

SSM3K104TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K104TU Power Management Switch Applications High-Speed Switching Applications Unit: mmUnit: mm 1.8 V drive Low ON-resistance: Ron = 110 m (max) (@VGS = 1.8 V) 2.10.1Ron = 74 m (max) (@VGS = 2.5 V) 1.70.1Ron = 56 m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25C) 1

 7.2. Size:366K  toshiba
 ssm3k107tu.pdf pdf_icon

SSM3K106TU

SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications Unit: mm 4 V drive2.10.1 Low ON-resistance: Ron = 410 m (max) (@VGS = 4V) 1.70.1Ron = 200 m (max) (@VGS = 10V) Lead(Pb)-free12 3Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrainsource voltage VDS 20 VGates

 7.3. Size:251K  toshiba
 ssm3k101tu.pdf pdf_icon

SSM3K106TU

SSM3K101TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K101TU High Speed Switching Applications Unit: mm 1.8V drive 2.10.1 Low on-resistance: Ron = 230m (max) (@VGS = 1.8 V) 1.70.1Ron = 138m (max) (@VGS = 2.5 V) Ron = 103m (max) (@VGS = 4.0 V) Lead(Pb)-free 12 3Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit

MOSTRAR MÁS

Otros transistores... SSM3K02F , SSM3K02T , SSM3K05FU , SSM3K09FU , SSM3K101TU , SSM3K102TU , SSM3K104TU , SSM3K105TU , IRF1405 , SSM3K107TU , SSM3K116TU , SSM3K119TU , SSM3K121TU , SSM3K122TU , SSM3K123TU , SSM3K124TU , SSM3K126TU .

History: SQM120N06-3M5L | P2610ADG | HM5N60 | DMP3018SFK | HUFA75639S3ST | FQI8P10TU | SI2342DS

 

 
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