SSM3K106TU Todos los transistores

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SSM3K106TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM3K106TU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.5 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 1.2 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.31 Ohm

Empaquetado / Estuche: UFM

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SSM3K106TU Datasheet (PDF)

1.1. ssm3k106tu.pdf Size:246K _toshiba

SSM3K106TU
SSM3K106TU

SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications Unit: mm 2.10.1 4 V drive 1.70.1 Low ON-resistance: Ron = 530 m? (max) (@VGS = 4 V) Ron = 310 m? (max) (@VGS = 10 V) Lead (Pb)-free 1 2 3 Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage V

3.1. ssm3k107tu.pdf Size:366K _toshiba

SSM3K106TU
SSM3K106TU

SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications Unit: mm 4 V drive 2.10.1 Low ON-resistance: Ron = 410 m? (max) (@VGS = 4V) 1.70.1 Ron = 200 m? (max) (@VGS = 10V) Lead(Pb)-free 1 2 3 Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drainsource voltage VDS 20 V Gatesource voltage VGSS

3.2. ssm3k105tu.pdf Size:350K _toshiba

SSM3K106TU
SSM3K106TU

SSM3K105TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K105TU High Speed Switching Applications Unit: mm 4V drive 2.10.1 Low on-resistance: Ron = 480m? (max) (@VGS = 3.3V) 1.70.1 Ron = 200m? (max) (@VGS = 4V) Ron = 110m? (max) (@VGS = 10V) Lead(Pb)-free 1 2 3 Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-Source voltage VDS

3.3. ssm3k101tu.pdf Size:251K _toshiba

SSM3K106TU
SSM3K106TU

SSM3K101TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K101TU High Speed Switching Applications Unit: mm 1.8V drive 2.10.1 Low on-resistance: Ron = 230m? (max) (@VGS = 1.8 V) 1.70.1 Ron = 138m? (max) (@VGS = 2.5 V) Ron = 103m? (max) (@VGS = 4.0 V) Lead(Pb)-free 1 2 3 Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-Source vol

3.4. ssm3k104tu 071101.pdf Size:148K _toshiba

SSM3K106TU
SSM3K106TU

SSM3K104TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K104TU Power Management Switch Applications High-Speed Switching Applications Unit: mm Unit: mm 1.8 V drive Low ON-resistance: Ron = 110 m? (max) (@VGS = 1.8 V) 2.10.1 Ron = 74 m? (max) (@VGS = 2.5 V) 1.70.1 Ron = 56 m? (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25C) 1 Characteristic

3.5. ssm3k102tu.pdf Size:251K _toshiba

SSM3K106TU
SSM3K106TU

SSM3K102TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K102TU High Speed Switching Applications Unit: mm 1.8V drive 2.10.1 Low on-resistance: Ron = 154m? (max) (@VGS = 1.8 V) 1.70.1 Ron = 99m? (max) (@VGS = 2.5 V) Ron = 71m? (max) (@VGS = 4.0 V) Lead(Pb)-free 1 2 3 Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-Source volta

Otros transistores... SSM3K02F , SSM3K02T , SSM3K05FU , SSM3K09FU , SSM3K101TU , SSM3K102TU , SSM3K104TU , SSM3K105TU , BUZ90A , SSM3K107TU , SSM3K116TU , SSM3K119TU , SSM3K121TU , SSM3K122TU , SSM3K123TU , SSM3K124TU , SSM3K126TU .

 


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