SSM3K106TU Datasheet and Replacement. Cross Reference Search

SSM3K106TU Datasheet (PDF)

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SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications Unit: mm2.10.1 4 V drive 1.70.1 Low ON-resistance: Ron = 530 m (max) (@VGS = 4 V) Ron = 310 m (max) (@VGS = 10 V) Lead (Pb)-free 12 3Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrain-source voltage VDS 20 VGate-

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SSM3K104TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K104TU Power Management Switch Applications High-Speed Switching Applications Unit: mmUnit: mm 1.8 V drive Low ON-resistance: Ron = 110 m (max) (@VGS = 1.8 V) 2.10.1Ron = 74 m (max) (@VGS = 2.5 V) 1.70.1Ron = 56 m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25C) 1

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SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications Unit: mm 4 V drive2.10.1 Low ON-resistance: Ron = 410 m (max) (@VGS = 4V) 1.70.1Ron = 200 m (max) (@VGS = 10V) Lead(Pb)-free12 3Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrainsource voltage VDS 20 VGates

7.3. Size:251K toshiba
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SSM3K101TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K101TU High Speed Switching Applications Unit: mm 1.8V drive 2.10.1 Low on-resistance: Ron = 230m (max) (@VGS = 1.8 V) 1.70.1Ron = 138m (max) (@VGS = 2.5 V) Ron = 103m (max) (@VGS = 4.0 V) Lead(Pb)-free 12 3Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit