SSM3K15AFU Todos los transistores

 

SSM3K15AFU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSM3K15AFU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 8 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.6 Ohm
   Paquete / Cubierta: SOT323 SC70 USM
 

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SSM3K15AFU Datasheet (PDF)

 ..1. Size:229K  toshiba
 ssm3k15afu.pdf pdf_icon

SSM3K15AFU

SSM3K15AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AFU Load Switching Applications Unit: mm 2.5 V drive Low ON-resistance: RDS(ON) = 3.6 (max) (@VGS = 4 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDSS 30 VGate-Source voltage VGSS 2

 5.1. Size:227K  toshiba
 ssm3k15afs.pdf pdf_icon

SSM3K15AFU

SSM3K15AFS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AFS Load Switching Applications Unit: mm 2.5 V drive Low ON-resistance: RDS(ON) = 3.6 (max) (@VGS = 4 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDSS 30 VGate-Source voltage VGSS 2

 6.1. Size:231K  toshiba
 ssm3k15act.pdf pdf_icon

SSM3K15AFU

SSM3K15ACT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15ACT Load Switching Applications Unit: mm 2.5 V drive Low ON-resistance: RDS(ON) = 3.6 (max) (@VGS = 4 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDSS 30 VGate-Source voltage VGSS 2

 6.2. Size:203K  toshiba
 ssm3k15amfv.pdf pdf_icon

SSM3K15AFU

SSM3K15AMFV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AMFV Load Switching Applications Unit: mm 2.5 V drive Low ON-resistance: RDS(ON) = 3.6 (max) (@VGS = 4 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) 1.20.050.80.05Absolute Maximum Ratings (Ta = 25C) 1Characteristics Symbol Rating Unit3Drain-Source voltage VDSS 30 V

MOSTRAR MÁS

Otros transistores... SSM3K126TU , SSM3K127TU , SSM3K128TU , SSM3K12T , SSM3K131TU , SSM3K14T , SSM3K15ACT , SSM3K15AFS , IRF3205 , SSM3K15AMFV , SSM3K15CT , SSM3K15FS , SSM3K15FU , SSM3K15FV , SSM3K15F , SSM3K16CT , SSM3K16FS .

History: UPA1931TE | NCE60P65K | NVMFD5C478N | AOB2140L | AOE6932 | FKV460S | RHU003N03

 

 
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