All MOSFET. SSM3K15AFU Datasheet

 

SSM3K15AFU MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSM3K15AFU
   Marking Code: DI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 0.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 8 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.6 Ohm
   Package: SOT323 SC70 USM

 SSM3K15AFU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSM3K15AFU Datasheet (PDF)

 ..1. Size:229K  toshiba
ssm3k15afu.pdf

SSM3K15AFU SSM3K15AFU

SSM3K15AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AFU Load Switching Applications Unit: mm 2.5 V drive Low ON-resistance: RDS(ON) = 3.6 (max) (@VGS = 4 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDSS 30 VGate-Source voltage VGSS 2

 5.1. Size:227K  toshiba
ssm3k15afs.pdf

SSM3K15AFU SSM3K15AFU

SSM3K15AFS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AFS Load Switching Applications Unit: mm 2.5 V drive Low ON-resistance: RDS(ON) = 3.6 (max) (@VGS = 4 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDSS 30 VGate-Source voltage VGSS 2

 6.1. Size:231K  toshiba
ssm3k15act.pdf

SSM3K15AFU SSM3K15AFU

SSM3K15ACT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15ACT Load Switching Applications Unit: mm 2.5 V drive Low ON-resistance: RDS(ON) = 3.6 (max) (@VGS = 4 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDSS 30 VGate-Source voltage VGSS 2

 6.2. Size:203K  toshiba
ssm3k15amfv.pdf

SSM3K15AFU SSM3K15AFU

SSM3K15AMFV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AMFV Load Switching Applications Unit: mm 2.5 V drive Low ON-resistance: RDS(ON) = 3.6 (max) (@VGS = 4 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) 1.20.050.80.05Absolute Maximum Ratings (Ta = 25C) 1Characteristics Symbol Rating Unit3Drain-Source voltage VDSS 30 V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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