SSM3K15AMFV MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM3K15AMFV

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.15 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 8 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.6 Ohm

Encapsulados: SOT723 VESM

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SSM3K15AMFV datasheet

 ..1. Size:203K  toshiba
 ssm3k15amfv.pdf pdf_icon

SSM3K15AMFV

SSM3K15AMFV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AMFV Load Switching Applications Unit mm 2.5 V drive Low ON-resistance RDS(ON) = 3.6 (max) (@VGS = 4 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) 1.2 0.05 0.8 0.05 Absolute Maximum Ratings (Ta = 25 C) 1 Characteristics Symbol Rating Unit 3 Drain-Source voltage VDSS 30 V

 6.1. Size:231K  toshiba
 ssm3k15act.pdf pdf_icon

SSM3K15AMFV

SSM3K15ACT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15ACT Load Switching Applications Unit mm 2.5 V drive Low ON-resistance RDS(ON) = 3.6 (max) (@VGS = 4 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS 2

 6.2. Size:227K  toshiba
 ssm3k15afs.pdf pdf_icon

SSM3K15AMFV

SSM3K15AFS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AFS Load Switching Applications Unit mm 2.5 V drive Low ON-resistance RDS(ON) = 3.6 (max) (@VGS = 4 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS 2

 6.3. Size:229K  toshiba
 ssm3k15afu.pdf pdf_icon

SSM3K15AMFV

SSM3K15AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AFU Load Switching Applications Unit mm 2.5 V drive Low ON-resistance RDS(ON) = 3.6 (max) (@VGS = 4 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS 2

MOSTRAR MÁS

Otros transistores... SSM3K127TU, SSM3K128TU, SSM3K12T, SSM3K131TU, SSM3K14T, SSM3K15ACT, SSM3K15AFS, SSM3K15AFU, IRF740, SSM3K15CT, SSM3K15FS, SSM3K15FU, SSM3K15FV, SSM3K15F, SSM3K16CT, SSM3K16FS, SSM3K16FU