SSM3K16CT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM3K16CT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 0.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 9.8 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
Búsqueda de reemplazo de SSM3K16CT MOSFET
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SSM3K16CT datasheet
ssm3k16ct.pdf
SSM3K16CT TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K16CT High-Speed Switching Applications Unit mm Analog Switch Applications Suitable for high-density mounting due to compact package 0.6 0.05 0.5 0.03 Low ON-resistance Ron = 3.0 (max) (@VGS = 4 V) Ron = 4.0 (max) (@VGS = 2.5 V) Ron = 15 (max) (@VGS = 1.5 V) Absolute
ssm3k16te.pdf
SSM3K16TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16TE High Speed Switching Applications Unit mm Analog Switch Applications Suitable for high-density mounting due to compact package Low on resistance Ron = 3.0 (max) (@VGS = 4 V) Ron = 4.0 (max) (@VGS = 2.5 V) Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25 C)
ssm3k16fs.pdf
SSM3K16FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FS High Speed Switching Applications Unit mm Analog Switch Applications Suitable for high-density mounting due to compact package Low on resistance Ron = 3.0 (max) (@VGS = 4 V) Ron = 4.0 (max) (@VGS = 2.5 V) Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25 C)
Otros transistores... SSM3K15AFS, SSM3K15AFU, SSM3K15AMFV, SSM3K15CT, SSM3K15FS, SSM3K15FU, SSM3K15FV, SSM3K15F, IRFP460, SSM3K16FS, SSM3K16FU, SSM3K16FV, SSM3K17FU, SSM3K301T, SSM3K302T, SSM3K303T, SSM3K309T
History: QM2520C1
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