SSM3K16CT Specs and Replacement
Type Designator: SSM3K16CT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 9.8 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
SSM3K16CT substitution
- MOSFET ⓘ Cross-Reference Search
SSM3K16CT datasheet
ssm3k16ct.pdf
SSM3K16CT TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K16CT High-Speed Switching Applications Unit mm Analog Switch Applications Suitable for high-density mounting due to compact package 0.6 0.05 0.5 0.03 Low ON-resistance Ron = 3.0 (max) (@VGS = 4 V) Ron = 4.0 (max) (@VGS = 2.5 V) Ron = 15 (max) (@VGS = 1.5 V) Absolute ... See More ⇒
ssm3k16te.pdf
SSM3K16TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16TE High Speed Switching Applications Unit mm Analog Switch Applications Suitable for high-density mounting due to compact package Low on resistance Ron = 3.0 (max) (@VGS = 4 V) Ron = 4.0 (max) (@VGS = 2.5 V) Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25 C)... See More ⇒
ssm3k16fs.pdf
SSM3K16FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FS High Speed Switching Applications Unit mm Analog Switch Applications Suitable for high-density mounting due to compact package Low on resistance Ron = 3.0 (max) (@VGS = 4 V) Ron = 4.0 (max) (@VGS = 2.5 V) Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25 C)... See More ⇒
Detailed specifications: SSM3K15AFS, SSM3K15AFU, SSM3K15AMFV, SSM3K15CT, SSM3K15FS, SSM3K15FU, SSM3K15FV, SSM3K15F, IRFP460, SSM3K16FS, SSM3K16FU, SSM3K16FV, SSM3K17FU, SSM3K301T, SSM3K302T, SSM3K303T, SSM3K309T
Keywords - SSM3K16CT MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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