BUK110-50GS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK110-50GS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
|Id|ⓘ - Corriente continua de drenaje: 25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VRds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
Paquete / Cubierta: SOT404
Búsqueda de reemplazo de MOSFET BUK110-50GS
BUK110-50GS Datasheet (PDF)
buk110-50gs 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK110-50GS TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected power MOSFETin a 3 pin plastic surface mount VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 50 Apurpose switch for automotive PD Total power
buk110-50gl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK110-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 Vmount envelope, intended as a ID Continuous drain current 45 Ageneral purpose switch for P
buk110-50dl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK110-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 Vmount envelope, intended as a ID Continuous drain current 45 Ageneral purpose switch for P
buk114-50l-s.pdf
Philips Semiconductors Product specification Logic level TOPFET BUK114-50L/S SMD version of BUK104-50L/S DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin surface VDS Continuous drain source voltage 50 Vmounting plastic envelope, intended ID Continuous drain current 15 Aas a general purpose
buk118-50dl.pdf
Philips Semiconductors Product specification Logic level TOPFET BUK118-50DL DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin plastic ID Continuous drain current 16 Apackage. PD Total power dissipation 65 WTj Continuous
buk114-50l-s 1.pdf
Philips Semiconductors Product specification Logic level TOPFET BUK114-50L/S SMD version of BUK104-50L/S DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin surface VDS Continuous drain source voltage 50 Vmounting plastic envelope, intended ID Continuous drain current 15 Aas a general purpose
buk119-50dl.pdf
Philips Semiconductors Product specification Logic level TOPFET BUK119-50DL DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin plastic ID Continuous drain current 20 Apackage. PD Total power dissipation 90 WTj Continuous
buk112-50gl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK112-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a low side ID Continuous drain current 12 Aswitch for automotive applicatio
buk111-50gl 1.pdf
Philips Semiconductors Product specification Logic level TOPFET BUK111-50GL SMD version of BUK112-50GL DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin plastic SMD VDS Continuous drain source voltage 50 Venvelope, intended as a low side ID Continuous drain current 12 Aswitch for automotive
buk116-50l-s 1.pdf
Philips Semiconductors Product specification Logic level TOPFET BUK116-50L/S SMD version of BUK106-50L/S DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin surface VDS Continuous drain source voltage 50 Vmounting plastic envelope, intended ID Continuous drain current 50 Aas a general purpose
buk113-50dl 1.pdf
Philips Semiconductors Objective specification PowerMOS transistor BUK113-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic overload protected logic SYMBOL PARAMETER MIN. MAX. UNITlevel power MOSFET in a surfacemount plastic envelope, intended as VDS Continuous drain source voltage - 50 Va general purpose switch forautomotive systems and other ID Drain current l
Otros transistores... BUK106-50S , BUK106-50SP , BUK108-50GS , BUK109-50DL , BUK109-50GL , BUK109-50GS , BUK110-50DL , BUK110-50GL , AON6380 , BUK111-50GL , BUK112-50GL , BUK114-50L , BUK114-50S , BUK116-50L , BUK116-50S , BUK200-50X , BUK203-50X .
Liste
Recientemente añadidas las descripciónes de los transistores:
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