All MOSFET. BUK110-50GS Datasheet

 

BUK110-50GS MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUK110-50GS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SOT404

 BUK110-50GS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK110-50GS Datasheet (PDF)

 ..1. Size:89K  philips
buk110-50gs 1.pdf

BUK110-50GS BUK110-50GS

Philips Semiconductors Product specification PowerMOS transistor BUK110-50GS TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected power MOSFETin a 3 pin plastic surface mount VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 50 Apurpose switch for automotive PD Total power

 4.1. Size:87K  philips
buk110-50gl 1.pdf

BUK110-50GS BUK110-50GS

Philips Semiconductors Product specification PowerMOS transistor BUK110-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 Vmount envelope, intended as a ID Continuous drain current 45 Ageneral purpose switch for P

 5.1. Size:72K  philips
buk110-50dl 1.pdf

BUK110-50GS BUK110-50GS

Philips Semiconductors Product specification PowerMOS transistor BUK110-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 Vmount envelope, intended as a ID Continuous drain current 45 Ageneral purpose switch for P

 9.1. Size:111K  philips
buk114-50l-s.pdf

BUK110-50GS BUK110-50GS

Philips Semiconductors Product specification Logic level TOPFET BUK114-50L/S SMD version of BUK104-50L/S DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin surface VDS Continuous drain source voltage 50 Vmounting plastic envelope, intended ID Continuous drain current 15 Aas a general purpose

 9.2. Size:44K  philips
buk118-50dl.pdf

BUK110-50GS BUK110-50GS

Philips Semiconductors Product specification Logic level TOPFET BUK118-50DL DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin plastic ID Continuous drain current 16 Apackage. PD Total power dissipation 65 WTj Continuous

 9.3. Size:113K  philips
buk114-50l-s 1.pdf

BUK110-50GS BUK110-50GS

Philips Semiconductors Product specification Logic level TOPFET BUK114-50L/S SMD version of BUK104-50L/S DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin surface VDS Continuous drain source voltage 50 Vmounting plastic envelope, intended ID Continuous drain current 15 Aas a general purpose

 9.4. Size:44K  philips
buk119-50dl.pdf

BUK110-50GS BUK110-50GS

Philips Semiconductors Product specification Logic level TOPFET BUK119-50DL DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin plastic ID Continuous drain current 20 Apackage. PD Total power dissipation 90 WTj Continuous

 9.5. Size:91K  philips
buk112-50gl 1.pdf

BUK110-50GS BUK110-50GS

Philips Semiconductors Product specification PowerMOS transistor BUK112-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a low side ID Continuous drain current 12 Aswitch for automotive applicatio

 9.6. Size:93K  philips
buk111-50gl 1.pdf

BUK110-50GS BUK110-50GS

Philips Semiconductors Product specification Logic level TOPFET BUK111-50GL SMD version of BUK112-50GL DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin plastic SMD VDS Continuous drain source voltage 50 Venvelope, intended as a low side ID Continuous drain current 12 Aswitch for automotive

 9.7. Size:108K  philips
buk116-50l-s 1.pdf

BUK110-50GS BUK110-50GS

Philips Semiconductors Product specification Logic level TOPFET BUK116-50L/S SMD version of BUK106-50L/S DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin surface VDS Continuous drain source voltage 50 Vmounting plastic envelope, intended ID Continuous drain current 50 Aas a general purpose

 9.8. Size:32K  philips
buk113-50dl 1.pdf

BUK110-50GS BUK110-50GS

Philips Semiconductors Objective specification PowerMOS transistor BUK113-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic overload protected logic SYMBOL PARAMETER MIN. MAX. UNITlevel power MOSFET in a surfacemount plastic envelope, intended as VDS Continuous drain source voltage - 50 Va general purpose switch forautomotive systems and other ID Drain current l

Datasheet: BUK106-50S , BUK106-50SP , BUK108-50GS , BUK109-50DL , BUK109-50GL , BUK109-50GS , BUK110-50DL , BUK110-50GL , AON6380 , BUK111-50GL , BUK112-50GL , BUK114-50L , BUK114-50S , BUK116-50L , BUK116-50S , BUK200-50X , BUK203-50X .

 

 
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