SSM3K302T MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SSM3K302T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM3K302T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 56 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.071 Ohm

Encapsulados: TSM

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SSM3K302T datasheet

..1. Size:174K toshiba
ssm3k302t.pdf pdf_icon

SSM3K302T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K302T Power Management Switch Applications Unit mm High Speed Switching Applications 1.8 V drive Low ON-resistance Ron = 131 m (max) (@VGS = 1.8V) Ron = 87m (max) (@VGS = 2.5V) Ron = 71 m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Dr

7.1. Size:231K toshiba
ssm3k309t.pdf pdf_icon

SSM3K309T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K309T Power Management Switch Applications High-Current Switching Applications Unit mm 1.8V drive Low on-resistance Ron = 47m (max) (@VGS = 1.8V) Ron = 35m (max) (@VGS = 2.5V) Ron = 31m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating

7.2. Size:190K toshiba
ssm3k301t.pdf pdf_icon

SSM3K301T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K301T Power Management Switch Applications Unit mm High-Speed Switching Applications Unit mm 1.8 V drive Low ON-resistance Ron = 110 m (max) (@VGS = 1.8 V) Ron = 74 m (max) (@VGS = 2.5 V) Ron = 56 m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol

7.3. Size:190K toshiba
ssm3k303t.pdf pdf_icon

SSM3K303T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K303T High Speed Switching Applications Unit mm 4 V drive Low ON-resistance Ron = 120 m (max) (@VGS = 4V) Ron = 83 m (max) (@VGS = 10V) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain source voltage VDS 30 V Gate source voltage VGSS 20 V DC ID 2.9

Otros transistores... SSM3K15FV, SSM3K15F, SSM3K16CT, SSM3K16FS, SSM3K16FU, SSM3K16FV, SSM3K17FU, SSM3K301T, IRF640N, SSM3K303T, SSM3K309T, SSM3K310T, SSM3K315T, SSM3K316T, SSM3K318T, SSM3K320T, SSM3K329R

SSM3K302T Todos los transistores