SSM3K302T Specs and Replacement

Type Designator: SSM3K302T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 56 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.071 Ohm

Package: TSM

SSM3K302T substitution

- MOSFET ⓘ Cross-Reference Search

 

SSM3K302T datasheet

 ..1. Size:174K  toshiba
 ssm3k302t.pdf pdf_icon

SSM3K302T

SSM3K302T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K302T Power Management Switch Applications Unit mm High Speed Switching Applications 1.8 V drive Low ON-resistance Ron = 131 m (max) (@VGS = 1.8V) Ron = 87m (max) (@VGS = 2.5V) Ron = 71 m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Dr... See More ⇒

 7.1. Size:231K  toshiba
 ssm3k309t.pdf pdf_icon

SSM3K302T

SSM3K309T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K309T Power Management Switch Applications High-Current Switching Applications Unit mm 1.8V drive Low on-resistance Ron = 47m (max) (@VGS = 1.8V) Ron = 35m (max) (@VGS = 2.5V) Ron = 31m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating... See More ⇒

 7.2. Size:190K  toshiba
 ssm3k301t.pdf pdf_icon

SSM3K302T

SSM3K301T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K301T Power Management Switch Applications Unit mm High-Speed Switching Applications Unit mm 1.8 V drive Low ON-resistance Ron = 110 m (max) (@VGS = 1.8 V) Ron = 74 m (max) (@VGS = 2.5 V) Ron = 56 m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol ... See More ⇒

 7.3. Size:190K  toshiba
 ssm3k303t.pdf pdf_icon

SSM3K302T

SSM3K303T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K303T High Speed Switching Applications Unit mm 4 V drive Low ON-resistance Ron = 120 m (max) (@VGS = 4V) Ron = 83 m (max) (@VGS = 10V) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain source voltage VDS 30 V Gate source voltage VGSS 20 V DC ID 2.9 ... See More ⇒

SHOW MORE

Detailed specifications: SSM3K15FV, SSM3K15F, SSM3K16CT, SSM3K16FS, SSM3K16FU, SSM3K16FV, SSM3K17FU, SSM3K301T, IRF640N, SSM3K303T, SSM3K309T, SSM3K310T, SSM3K315T, SSM3K316T, SSM3K318T, SSM3K320T, SSM3K329R

Keywords - SSM3K302T MOSFET specs

 SSM3K302T cross reference

 SSM3K302T equivalent finder

 SSM3K302T pdf lookup

 SSM3K302T substitution

 SSM3K302T replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility