SSM3K315T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM3K315T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 120 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0276 Ohm
Paquete / Cubierta: TSM
Búsqueda de reemplazo de SSM3K315T MOSFET
SSM3K315T Datasheet (PDF)
ssm3k315t.pdf

SSM3K315T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS) SSM3K315T High-Speed Switching Applications Unit: mm 4.5-V drive +0.2 Low ON-resistance : Ron = 41.5 m (max) (@VGS = 4.5 V) 2.8-0.3: Ron = 27.6 m (max) (@VGS = 10 V) +0.21.6-0.1Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrain-Source
ssm3k310t.pdf

SSM3K310T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K310T High-Speed Switching Applications 1.5 V drive Unit: mm Low ON-resistance: Ron = 66 m (max) (@VGS = 1.5 V) +0.22.8-0.3Ron = 43 m (max) (@VGS = 1.8 V) +0.2Ron = 32 m (max) (@VGS = 2.5 V) 1.6-0.1Ron = 28 m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25C)
ssm3k318t.pdf

SSM3K318T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS) SSM3K318T Load Switching Applications High-Speed Switching Applications Unit: mm+0.2 4.5 V drive 2.8-0.3 Low ON-resistance : RDS(ON) = 145 m (max) (@VGS = 4.5 V) +0.21.6-0.1: RDS(ON) = 107 m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Sy
ssm3k318r.pdf

SSM3K318RMOSFETs Silicon N-Channel MOSSSM3K318RSSM3K318RSSM3K318RSSM3K318R1. Applications1. Applications1. Applications1. Applications Load Switches Ultra-High-Speed Switching2. Features2. Features2. Features2. Features(1) 4.5-V gate drive voltage.(2) Low drain-source on-resistance RDS(ON) = 145 m (max) (@VGS = 4.5 V) RDS(ON) = 107 m (max) (@VGS
Otros transistores... SSM3K16FU , SSM3K16FV , SSM3K17FU , SSM3K301T , SSM3K302T , SSM3K303T , SSM3K309T , SSM3K310T , P55NF06 , SSM3K316T , SSM3K318T , SSM3K320T , SSM3K329R , SSM3K333R , SSM3K35CT , SSM3K35FS , SSM3K35MFV .
History: TJ8S06M3L | AOTS26108 | FQP13N06 | SM3307PSQG | VN2210N3 | NCE70T540D | IXTH88N15
History: TJ8S06M3L | AOTS26108 | FQP13N06 | SM3307PSQG | VN2210N3 | NCE70T540D | IXTH88N15



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