SSM3K315T Todos los transistores

 

SSM3K315T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSM3K315T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0276 Ohm
   Paquete / Cubierta: TSM
     - Selección de transistores por parámetros

 

SSM3K315T Datasheet (PDF)

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SSM3K315T

SSM3K315T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS) SSM3K315T High-Speed Switching Applications Unit: mm 4.5-V drive +0.2 Low ON-resistance : Ron = 41.5 m (max) (@VGS = 4.5 V) 2.8-0.3: Ron = 27.6 m (max) (@VGS = 10 V) +0.21.6-0.1Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrain-Source

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ssm3k310t.pdf pdf_icon

SSM3K315T

SSM3K310T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K310T High-Speed Switching Applications 1.5 V drive Unit: mm Low ON-resistance: Ron = 66 m (max) (@VGS = 1.5 V) +0.22.8-0.3Ron = 43 m (max) (@VGS = 1.8 V) +0.2Ron = 32 m (max) (@VGS = 2.5 V) 1.6-0.1Ron = 28 m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25C)

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ssm3k318t.pdf pdf_icon

SSM3K315T

SSM3K318T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS) SSM3K318T Load Switching Applications High-Speed Switching Applications Unit: mm+0.2 4.5 V drive 2.8-0.3 Low ON-resistance : RDS(ON) = 145 m (max) (@VGS = 4.5 V) +0.21.6-0.1: RDS(ON) = 107 m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Sy

 7.3. Size:226K  toshiba
ssm3k318r.pdf pdf_icon

SSM3K315T

SSM3K318RMOSFETs Silicon N-Channel MOSSSM3K318RSSM3K318RSSM3K318RSSM3K318R1. Applications1. Applications1. Applications1. Applications Load Switches Ultra-High-Speed Switching2. Features2. Features2. Features2. Features(1) 4.5-V gate drive voltage.(2) Low drain-source on-resistance RDS(ON) = 145 m (max) (@VGS = 4.5 V) RDS(ON) = 107 m (max) (@VGS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK2931 | FQPF13N50C

 

 
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