SSM3K333R MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM3K333R

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 77 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm

Encapsulados: SOT23

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SSM3K333R datasheet

 ..1. Size:228K  toshiba
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SSM3K333R

SSM3K333R TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS VII-H) SSM3K333R Power Management Switch Applications Unit mm High-Speed Switching Applications +0.08 0.42 +0.08 -0.05 0.17 0.05 M A -0.07 3 4.5V drive Low ON-resistance RDS(ON) = 42 m (max) (@VGS = 4.5 V) RDS(ON) = 28 m (max) (@VGS = 10 V) 1 2 0.95 0.95 Absolute Maxi

 ..2. Size:161K  utc
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SSM3K333R

UNISONIC TECHNOLOGIES CO., LTD SSM3K333R Preliminary Power MOSFET 6A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UTC SSM3K333R is an N-channel power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC SSM3K333R is usually used in power management switching applications. FEATURES * R

 ..3. Size:896K  cn vbsemi
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SSM3K333R

SSM3K333R www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)

 7.1. Size:219K  toshiba
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SSM3K333R

SSM3K336R MOSFETs Silicon N-Channel MOS SSM3K336R SSM3K336R SSM3K336R SSM3K336R 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) 4.5 V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 95 m (max) (@VGS = 10 V) RDS(ON) = 140 m (max) (@VG

MOSTRAR MÁS

Otros transistores... SSM3K303T, SSM3K309T, SSM3K310T, SSM3K315T, SSM3K316T, SSM3K318T, SSM3K320T, SSM3K329R, P55NF06, SSM3K35CT, SSM3K35FS, SSM3K35MFV, SSM3K36FS, SSM3K36MFV, SSM3K36TU, SSM3K37CT, SSM3K37FS