SSM5P05FU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SSM5P05FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM5P05FU Power Management Switch Unit: mmHigh Speed Switching Applications Small package Low on resistance : Ron = 3.3 (max) (@VGS = -4 V) : Ron = 4.0 (max) (@VGS = -2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Ratin

SSM5P15FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM5P15FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : Ron = 12 (max) (@VGS = -4 V) : Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage VDS -3

SSM5P15FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM5P15FE High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : Ron = 12 (max) (@VGS = -4 V) : Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage VDS -3

SSM5P16FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM5P16FE High Speed Switching Applications Analog Switch Applications Small package Unit: mm Low on-resistance : R 8 (max) (@VGS 4 V) DS(ON): R 12 (max) (@VGS 2.5 V) DS(ON): R 45 (max) (@VGS 1.5 V) DS(ON)Absolute Maximum Ratings (Ta = 25C)

SSM5P16FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM5P16FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low on-resistance : RDS(ON) = 8 (max) (@VGS = -4 V) : RDS(ON) = 12 (max) (@VGS = -2.5 V) : RDS(ON) = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Char