SSM5P05FU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSM5P05FU
   Código: DH
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.1 V
   Cossⓘ - Capacitancia de salida: 21 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.3 Ohm
   Paquete / Cubierta: SOT353 SC88A USV

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SSM5P05FU Datasheet (PDF)

..1. Size:130K toshiba
ssm5p05fu.pdf

SSM5P05FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM5P05FU Power Management Switch Unit: mmHigh Speed Switching Applications Small package Low on resistance : Ron = 3.3 (max) (@VGS = -4 V) : Ron = 4.0 (max) (@VGS = -2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Ratin

9.1. Size:188K toshiba
ssm5p15fu.pdf

SSM5P15FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM5P15FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : Ron = 12 (max) (@VGS = -4 V) : Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage VDS -3

9.2. Size:214K toshiba
ssm5p15fe.pdf

SSM5P15FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM5P15FE High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : Ron = 12 (max) (@VGS = -4 V) : Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage VDS -3

9.3. Size:215K toshiba
ssm5p16fe.pdf

SSM5P16FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM5P16FE High Speed Switching Applications Analog Switch Applications Small package Unit: mm Low on-resistance : R 8 (max) (@VGS 4 V) DS(ON): R 12 (max) (@VGS 2.5 V) DS(ON): R 45 (max) (@VGS 1.5 V) DS(ON)Absolute Maximum Ratings (Ta = 25C)

9.4. Size:191K toshiba
ssm5p16fu.pdf

SSM5P16FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM5P16FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low on-resistance : RDS(ON) = 8 (max) (@VGS = -4 V) : RDS(ON) = 12 (max) (@VGS = -2.5 V) : RDS(ON) = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Char

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