SSM6J412TU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM6J412TU

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 118 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0427 Ohm

Encapsulados: UF6

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SSM6J412TU datasheet

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SSM6J412TU

SSM6J412TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM6J412TU Power Management Switch Applications Unit mm 2.1 0.1 1.5-V drive 1.7 0.1 Low ON-resistance RDS(ON) = 99.6 m (max) (@VGS = -1.5 V) RDS(ON) = 67.8 m (max) (@VGS = -1.8 V) RDS(ON) = 51.4 m (max) (@VGS = -2.5 V) 1 6 RDS(ON) = 42.7 m (max) (@VGS = -4.5 V) 5 2 A

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SSM6J412TU

SSM6J410TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM6J410TU Power Management Switch Applications Unit mm High-Speed Switching Applications 4-V drive Low ON-resistance RDS(ON) = 393m (max) (@VGS = 4 V) RDS(ON) = 216m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain-Sou

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SSM6J412TU

SSM6J414TU MOSFETs Silicon P-Channel MOS (U-MOS ) SSM6J414TU SSM6J414TU SSM6J414TU SSM6J414TU 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 54 m (max) (@VGS = -1.5 V) RDS(ON) = 36 m (max) (@VGS = -

 8.1. Size:197K  toshiba
ssm6j402tu.pdf pdf_icon

SSM6J412TU

SSM6J402TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J402TU DC/DC Converter Application High-Speed Switching Applications unit mm 2.1 0.1 4.0 V drive 1.7 0.1 Low ON-resistance RDS(ON) = 225m max (@VGS = -4 V) RDS(ON) = 117m max (@VGS = -10 V) 1 6 2 5 Absolute Maximum Ratings (Ta = 25 C) 3 4 Characteristic Symbol Rating

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