SSM6J412TU Datasheet and Replacement. Cross Reference Search

SSM6J412TU Datasheet (PDF)

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SSM6J412TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J412TU Power Management Switch Applications Unit: mm2.10.1 1.5-V drive1.70.1 Low ON-resistance: RDS(ON) = 99.6 m (max) (@VGS = -1.5 V) RDS(ON) = 67.8 m (max) (@VGS = -1.8 V) RDS(ON) = 51.4 m (max) (@VGS = -2.5 V) 1 6RDS(ON) = 42.7 m (max) (@VGS = -4.5 V) 5 2A

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SSM6J410TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J410TU Power Management Switch Applications Unit: mm High-Speed Switching Applications 4-V drive Low ON-resistance RDS(ON) = 393m (max) (@VGS = 4 V) RDS(ON) = 216m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrain-Sou

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SSM6J414TUMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J414TUSSM6J414TUSSM6J414TUSSM6J414TU1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 54 m (max) (@VGS = -1.5 V) RDS(ON) = 36 m (max) (@VGS = -

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SSM6J402TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J402TU DC/DC Converter Application High-Speed Switching Applications unit: mm2.10.1 4.0 V drive 1.70.1 Low ON-resistance : RDS(ON) = 225m max (@VGS = -4 V) : RDS(ON) = 117m max (@VGS = -10 V) 1 62 5Absolute Maximum Ratings (Ta = 25C) 3 4Characteristic Symbol Rating