BUK200-50X MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUK200-50X
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 62.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: SOT26301

Búsqueda de reemplazo de MOSFET BUK200-50X

BUK200-50X Datasheet (PDF)

..1. Size:96K philips
buk200-50x 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK200-50X TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 3.5 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPL

5.1. Size:97K philips
buk200-50y 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK200-50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 3.5 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPL

9.1. Size:94K philips
buk206-50x 1.pdf

Philips Semiconductors Product specification TOPFET high side switch BUK206-50X SMD version of BUK202-50X DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 9 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAMET

9.2. Size:92K philips
buk203-50y 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK203-50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 1.6 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPL

9.3. Size:93K philips
buk202-50y 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK202-50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 9 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPLIC

9.4. Size:94K philips
buk207-50y 1.pdf

Philips Semiconductors Product specification TOPFET high side switch BUK207-50Y SMD version of BUK203-50Y DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 1.6 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAM

9.5. Size:97K philips
buk205-50x 1.pdf

Philips Semiconductors Product specification TOPFET high side switch BUK205-50X SMD version of BUK201-50X DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 6 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAMET

9.6. Size:91K philips
buk203-50x 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK203-50X TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 1.6 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPL

9.7. Size:99K philips
buk204-50y 1.pdf

Philips Semiconductors Product specification TOPFET high side switch BUK204-50Y SMD version of BUK200-50Y DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 3.5 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAM

9.8. Size:95K philips
buk201-50x 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK201-50X TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 6 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPLIC

9.9. Size:93K philips
buk202-50x 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK202-50X TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 9 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPLIC

9.10. Size:96K philips
buk201-50y 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK201-50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 6 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPLIC

9.11. Size:98K philips
buk204-50x 1.pdf

Philips Semiconductors Product specification TOPFET high side switch BUK204-50X SMD version of BUK200-50X DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 3.5 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAM

9.12. Size:98K philips
buk205-50y 1.pdf

Philips Semiconductors Product specification TOPFET high side switch BUK205-50Y SMD version of BUK201-50Y DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 6 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAMET

9.13. Size:95K philips
buk206-50y 1.pdf

Philips Semiconductors Product specification TOPFET high side switch BUK206-50Y SMD version of BUK202-50Y DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 9 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAMET

9.14. Size:93K philips
buk207-50x 1.pdf

Philips Semiconductors Product specification TOPFET high side switch BUK207-50X SMD version of BUK203-50X DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 1.6 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAM

Otros transistores... BUK110-50GL , BUK110-50GS , BUK111-50GL , BUK112-50GL , BUK114-50L , BUK114-50S , BUK116-50L , BUK116-50S , AO4468 , BUK203-50X , BUK203-50Y , BUK204-50Y , BUK207-50X , BUK207-50Y , BUK426-1000A , BUK426-1000B , BUK436W-1000B .

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