BUK200-50X. Аналоги и основные параметры
Наименование производителя: BUK200-50X
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 62.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 50 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
Тип корпуса: SOT26301
Аналог (замена) для BUK200-50X
- подборⓘ MOSFET транзистора по параметрам
BUK200-50X даташит
..1. Size:96K philips
buk200-50x 1.pdf 
Philips Semiconductors Product specification PowerMOS transistor BUK200-50X TOPFET high side switch DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 3.5 A 5 pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPL
5.1. Size:97K philips
buk200-50y 1.pdf 
Philips Semiconductors Product specification PowerMOS transistor BUK200-50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 3.5 A 5 pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPL
9.1. Size:94K philips
buk206-50x 1.pdf 
Philips Semiconductors Product specification TOPFET high side switch BUK206-50X SMD version of BUK202-50X DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 9 A 5 pin plastic surface mount envelope, configured as a single high side switch. SYMBOL PARAMET
9.2. Size:92K philips
buk203-50y 1.pdf 
Philips Semiconductors Product specification PowerMOS transistor BUK203-50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 1.6 A 5 pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPL
9.3. Size:93K philips
buk202-50y 1.pdf 
Philips Semiconductors Product specification PowerMOS transistor BUK202-50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 9 A 5 pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPLIC
9.4. Size:94K philips
buk207-50y 1.pdf 
Philips Semiconductors Product specification TOPFET high side switch BUK207-50Y SMD version of BUK203-50Y DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 1.6 A 5 pin plastic surface mount envelope, configured as a single high side switch. SYMBOL PARAM
9.5. Size:97K philips
buk205-50x 1.pdf 
Philips Semiconductors Product specification TOPFET high side switch BUK205-50X SMD version of BUK201-50X DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 6 A 5 pin plastic surface mount envelope, configured as a single high side switch. SYMBOL PARAMET
9.6. Size:91K philips
buk203-50x 1.pdf 
Philips Semiconductors Product specification PowerMOS transistor BUK203-50X TOPFET high side switch DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 1.6 A 5 pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPL
9.7. Size:99K philips
buk204-50y 1.pdf 
Philips Semiconductors Product specification TOPFET high side switch BUK204-50Y SMD version of BUK200-50Y DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 3.5 A 5 pin plastic surface mount envelope, configured as a single high side switch. SYMBOL PARAM
9.8. Size:95K philips
buk201-50x 1.pdf 
Philips Semiconductors Product specification PowerMOS transistor BUK201-50X TOPFET high side switch DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 6 A 5 pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPLIC
9.9. Size:93K philips
buk202-50x 1.pdf 
Philips Semiconductors Product specification PowerMOS transistor BUK202-50X TOPFET high side switch DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 9 A 5 pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPLIC
9.10. Size:96K philips
buk201-50y 1.pdf 
Philips Semiconductors Product specification PowerMOS transistor BUK201-50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 6 A 5 pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPLIC
9.11. Size:98K philips
buk204-50x 1.pdf 
Philips Semiconductors Product specification TOPFET high side switch BUK204-50X SMD version of BUK200-50X DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 3.5 A 5 pin plastic surface mount envelope, configured as a single high side switch. SYMBOL PARAM
9.12. Size:98K philips
buk205-50y 1.pdf 
Philips Semiconductors Product specification TOPFET high side switch BUK205-50Y SMD version of BUK201-50Y DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 6 A 5 pin plastic surface mount envelope, configured as a single high side switch. SYMBOL PARAMET
9.13. Size:95K philips
buk206-50y 1.pdf 
Philips Semiconductors Product specification TOPFET high side switch BUK206-50Y SMD version of BUK202-50Y DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 9 A 5 pin plastic surface mount envelope, configured as a single high side switch. SYMBOL PARAMET
9.14. Size:93K philips
buk207-50x 1.pdf 
Philips Semiconductors Product specification TOPFET high side switch BUK207-50X SMD version of BUK203-50X DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 1.6 A 5 pin plastic surface mount envelope, configured as a single high side switch. SYMBOL PARAM
Другие MOSFET... BUK110-50GL
, BUK110-50GS
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