SSM6K210FE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM6K210FE
Código: NP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.5 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 1.4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.6 V
Carga de la puerta (Qg): 2.8 nC
Conductancia de drenaje-sustrato (Cd): 33 pF
Resistencia entre drenaje y fuente RDS(on): 0.228 Ohm
Paquete / Cubierta: SOT563 ES6
Búsqueda de reemplazo de MOSFET SSM6K210FE
SSM6K210FE Datasheet (PDF)
ssm6k210fe.pdf
SSM6K210FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K210FE High-Speed Switching Applications Power Management Switch Applications Unit: mm 4.0-V drive Low ON-resistance: Ron = 371 m (max) (@VGS = 4.0 V), Ron = 228 m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDS
ssm6k217fe.pdf
SSM6K217FEMOSFETs Silicon N-Channel MOSSSM6K217FESSM6K217FESSM6K217FESSM6K217FE1. Applications1. Applications1. Applications1. Applications Power Management Switches DC-DC Converters2. Features2. Features2. Features2. Features(1) 1.8-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 155 m (typ.) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) =
ssm6k211fe.pdf
SSM6K211FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS) SSM6K211FE High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: Ron = 118 m (max) (@VGS = 1.5 V) Ron = 82 m (max) (@VGS = 1.8 V) Ron = 59 m (max) (@VGS = 2.5 V) Ron = 47 m (max) (@VGS = 4.5 V) Absolute Maximum
ssm6k203fe.pdf
SSM6K203FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K203FE High-Speed Switching Applications Unit: mm Power Management Switch Applications 1.5 V drive Low ON-resistance: Ron = 153 m (max) (@VGS = 1.5V) Ron = 106 m (max) (@VGS = 1.8V) Ron = 76 m (max) (@VGS = 2.5V) Ron = 61 m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta
ssm6k204fe.pdf
SSM6K204FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K204FE High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: Ron = 307 m (max) (@VGS = 1.5V) Ron = 214 m (max) (@VGS = 1.8V) Ron = 164 m (max) (@VGS = 2.5V) Ron = 126 m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta
ssm6k22fe.pdf
SSM6K22FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) SSM6K22FE High Current Switching Applications Unit: mmDC-DC Converter Suitable for high-density mounting due to compact package Low on resistance: Ron = 170 m (max) (@VGS = 4.0 V) Ron = 230 m (max) (@VGS = 2.5 V) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain
ssm6k24fe.pdf
SSM6K24FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6K24FE High Speed Switching Applications Unit: mm1.60.05 Optimum for high-density mounting in small packages Low on-resistance: Ron = 145m (max) (@VGS = 4.5 V) 1.20.05Ron = 180m (max) (@VGS = 2.5 V) 1 6Maximum Ratings (Ta = 25C) 52Characteristics Symbol Rating Unit4
ssm6k208fe.pdf
SSM6K208FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K208FE High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.8V drive Low ON-resistance: Ron = 296m (max) (@VGS = 1.8 V) Ron = 177m (max) (@VGS = 2.5 V) Ron = 133m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rati
ssm6k202fe.pdf
SSM6K202FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K202FE Unit: mm High-Speed Switching Applications Power Management Switch Applications 1.8 V drive Low ON-resistance: Ron = 145 m (max) (@VGS = 1.8V) Ron = 101 m (max) (@VGS = 2.5V) Ron = 85 m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rat
ssm6k25fe.pdf
SSM6K25FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6K25FE High Speed Switching Applications Unit: mm1.60.05 Optimum for high-density mounting in small packages Low on-resistance: Ron = 395m (max) (@VGS = 1.8 V) 1.20.05Ron = 190m (max) (@VGS = 2.5 V) Ron = 145m (max) (@VGS = 4.0 V) 1 65Maximum Ratings (Ta = 25C) 24
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