SSM6K210FE
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM6K210FE
Marking Code: NP
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.6
V
|Id|ⓘ - Maximum Drain Current: 1.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 2.8
nC
Cossⓘ -
Output Capacitance: 33
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.228
Ohm
Package:
SOT563
ES6
SSM6K210FE
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM6K210FE
Datasheet (PDF)
..1. Size:202K toshiba
ssm6k210fe.pdf 
SSM6K210FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K210FE High-Speed Switching Applications Power Management Switch Applications Unit: mm 4.0-V drive Low ON-resistance: Ron = 371 m (max) (@VGS = 4.0 V), Ron = 228 m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDS
7.1. Size:213K toshiba
ssm6k217fe.pdf
SSM6K217FEMOSFETs Silicon N-Channel MOSSSM6K217FESSM6K217FESSM6K217FESSM6K217FE1. Applications1. Applications1. Applications1. Applications Power Management Switches DC-DC Converters2. Features2. Features2. Features2. Features(1) 1.8-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 155 m (typ.) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) =
7.2. Size:197K toshiba
ssm6k211fe.pdf
SSM6K211FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS) SSM6K211FE High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: Ron = 118 m (max) (@VGS = 1.5 V) Ron = 82 m (max) (@VGS = 1.8 V) Ron = 59 m (max) (@VGS = 2.5 V) Ron = 47 m (max) (@VGS = 4.5 V) Absolute Maximum
8.1. Size:198K toshiba
ssm6k203fe.pdf
SSM6K203FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K203FE High-Speed Switching Applications Unit: mm Power Management Switch Applications 1.5 V drive Low ON-resistance: Ron = 153 m (max) (@VGS = 1.5V) Ron = 106 m (max) (@VGS = 1.8V) Ron = 76 m (max) (@VGS = 2.5V) Ron = 61 m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta
8.2. Size:197K toshiba
ssm6k204fe.pdf
SSM6K204FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K204FE High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: Ron = 307 m (max) (@VGS = 1.5V) Ron = 214 m (max) (@VGS = 1.8V) Ron = 164 m (max) (@VGS = 2.5V) Ron = 126 m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta
8.3. Size:278K toshiba
ssm6k22fe.pdf
SSM6K22FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) SSM6K22FE High Current Switching Applications Unit: mmDC-DC Converter Suitable for high-density mounting due to compact package Low on resistance: Ron = 170 m (max) (@VGS = 4.0 V) Ron = 230 m (max) (@VGS = 2.5 V) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain
8.4. Size:153K toshiba
ssm6k24fe.pdf
SSM6K24FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6K24FE High Speed Switching Applications Unit: mm1.60.05 Optimum for high-density mounting in small packages Low on-resistance: Ron = 145m (max) (@VGS = 4.5 V) 1.20.05Ron = 180m (max) (@VGS = 2.5 V) 1 6Maximum Ratings (Ta = 25C) 52Characteristics Symbol Rating Unit4
8.5. Size:189K toshiba
ssm6k208fe.pdf
SSM6K208FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K208FE High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.8V drive Low ON-resistance: Ron = 296m (max) (@VGS = 1.8 V) Ron = 177m (max) (@VGS = 2.5 V) Ron = 133m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rati
8.6. Size:244K toshiba
ssm6k202fe.pdf
SSM6K202FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K202FE Unit: mm High-Speed Switching Applications Power Management Switch Applications 1.8 V drive Low ON-resistance: Ron = 145 m (max) (@VGS = 1.8V) Ron = 101 m (max) (@VGS = 2.5V) Ron = 85 m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rat
8.7. Size:154K toshiba
ssm6k25fe.pdf
SSM6K25FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6K25FE High Speed Switching Applications Unit: mm1.60.05 Optimum for high-density mounting in small packages Low on-resistance: Ron = 395m (max) (@VGS = 1.8 V) 1.20.05Ron = 190m (max) (@VGS = 2.5 V) Ron = 145m (max) (@VGS = 4.0 V) 1 65Maximum Ratings (Ta = 25C) 24
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