SSM6L16FE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM6L16FE

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.15 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 0.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 9.8 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm

Encapsulados: SOT563 ES6

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SSM6L16FE datasheet

 ..1. Size:204K  toshiba
 ssm6l16fe.pdf pdf_icon

SSM6L16FE

SSM6L16FE TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type( -MOSVI) SSM6L16FE High Speed Switching Applications Analog Switch Applications Unit mm Small package Low on-resistance Q1 RDS(ON) = 4 (max) (@VGS = 2.5 V) Q2 RDS(ON) = 12 (max) (@VGS = -2.5 V) Q1 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source volta

 8.1. Size:233K  toshiba
 ssm6l13tu.pdf pdf_icon

SSM6L16FE

SSM6L13TU TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type SSM6L13TU Power Management Switch Applications High-Speed Switching Applications Unit mm 2.1 0.1 1.8-V drive N ch , P ch 2 in 1 1.7 0.1 Low ON resistance Nch RDS(ON) = 235 m (max) (@VGS = 1.8 V) RDS(ON) = 178 m (max) (@VGS = 2.5 V) Pch RDS(ON) = 460 m (max) (@

 8.2. Size:233K  toshiba
 ssm6l14fe.pdf pdf_icon

SSM6L16FE

SSM6L14FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L14FE Power Management Switch Applications High-Speed Switching Applications Unit mm 1.6 0.05 N-ch 1.5-V drive P-ch 1.5-V drive 1.2 0.05 N-ch, P-ch, 2-in-1 Low ON-resistance Q1 N-ch RDS(ON) = 330 m (max) (@VGS = 2.5 V) 1 6 RDS(ON) = 240 m (max) (@VGS = 4.5 V) Q2 P-

 8.3. Size:214K  toshiba
 ssm6l11tu.pdf pdf_icon

SSM6L16FE

SSM6L11TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L11TU High Speed Switching Applications Optimum for high-density mounting in small packages Low ON-resistance Q1 RDS(ON) = 395m (max) (@VGS = 1.8 V) Q2 RDS(ON) = 430m (max) (@VGS = -2.5 V) Unit mm 2.1 0.1 Q1 Absolute Maximum Ratings (Ta = 25 C) 1.7 0.1 Characteristics Symbol Rating U

MOSTRAR MÁS

Otros transistores... SSM6K411TU, SSM6L05FU, SSM6L09FU, SSM6L10TU, SSM6L11TU, SSM6L12TU, SSM6L13TU, SSM6L14FE, 50N06, SSM6L35FE, SSM6L35FU, SSM6L36FE, SSM6L36TU, SSM6L39TU, SSM6L40TU, SSM6N04FU, SSM6N05FU