SSM6L16FE Todos los transistores

 

SSM6L16FE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSM6L16FE
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 9.8 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: SOT563 ES6
     - Selección de transistores por parámetros

 

SSM6L16FE Datasheet (PDF)

 ..1. Size:204K  toshiba
ssm6l16fe.pdf pdf_icon

SSM6L16FE

SSM6L16FE TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type(-MOSVI) SSM6L16FE High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low on-resistance Q1: RDS(ON) = 4 (max) (@VGS = 2.5 V) Q2: RDS(ON) = 12 (max) (@VGS = -2.5 V) Q1 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source volta

 8.1. Size:233K  toshiba
ssm6l13tu.pdf pdf_icon

SSM6L16FE

SSM6L13TU TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type SSM6L13TU Power Management Switch Applications High-Speed Switching Applications Unit: mm2.10.1 1.8-V drive Nch , Pch 2in1 1.70.1 Low ONresistance: Nch RDS(ON) = 235 m (max) (@VGS = 1.8 V) RDS(ON) = 178 m (max) (@VGS = 2.5 V) : Pch RDS(ON) = 460 m (max) (@

 8.2. Size:233K  toshiba
ssm6l14fe.pdf pdf_icon

SSM6L16FE

SSM6L14FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L14FE Power Management Switch Applications High-Speed Switching Applications Unit: mm1.60.05 N-ch: 1.5-V drive P-ch: 1.5-V drive 1.20.05 N-ch, P-ch, 2-in-1 Low ON-resistance Q1 N-ch:RDS(ON) = 330 m (max) (@VGS = 2.5 V) 1 6 RDS(ON) = 240 m (max) (@VGS = 4.5 V) Q2 P-

 8.3. Size:214K  toshiba
ssm6l11tu.pdf pdf_icon

SSM6L16FE

SSM6L11TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L11TU High Speed Switching Applications Optimum for high-density mounting in small packages Low ON-resistance Q1: RDS(ON) = 395m (max) (@VGS = 1.8 V) Q2: RDS(ON) = 430m (max) (@VGS = -2.5 V) Unit: mm 2.10.1Q1 Absolute Maximum Ratings (Ta = 25C) 1.70.1Characteristics Symbol Rating U

Otros transistores... SSM6K411TU , SSM6L05FU , SSM6L09FU , SSM6L10TU , SSM6L11TU , SSM6L12TU , SSM6L13TU , SSM6L14FE , 50N06 , SSM6L35FE , SSM6L35FU , SSM6L36FE , SSM6L36TU , SSM6L39TU , SSM6L40TU , SSM6N04FU , SSM6N05FU .

History: IXTP50N28T | 3SK249

 

 
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