SSM6L16FE
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SSM6L16FE
Маркировка: K6
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 0.15
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.1
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 0.1
A
Tjⓘ - Максимальная температура канала: 150
°C
Cossⓘ - Выходная емкость: 9.8
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3
Ohm
Тип корпуса:
SOT563
ES6
Аналог (замена) для SSM6L16FE
SSM6L16FE
Datasheet (PDF)
..1. Size:204K toshiba
ssm6l16fe.pdf 
SSM6L16FE TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type(-MOSVI) SSM6L16FE High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low on-resistance Q1: RDS(ON) = 4 (max) (@VGS = 2.5 V) Q2: RDS(ON) = 12 (max) (@VGS = -2.5 V) Q1 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source volta
8.1. Size:233K toshiba
ssm6l13tu.pdf 
SSM6L13TU TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type SSM6L13TU Power Management Switch Applications High-Speed Switching Applications Unit: mm2.10.1 1.8-V drive Nch , Pch 2in1 1.70.1 Low ONresistance: Nch RDS(ON) = 235 m (max) (@VGS = 1.8 V) RDS(ON) = 178 m (max) (@VGS = 2.5 V) : Pch RDS(ON) = 460 m (max) (@
8.2. Size:233K toshiba
ssm6l14fe.pdf 
SSM6L14FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L14FE Power Management Switch Applications High-Speed Switching Applications Unit: mm1.60.05 N-ch: 1.5-V drive P-ch: 1.5-V drive 1.20.05 N-ch, P-ch, 2-in-1 Low ON-resistance Q1 N-ch:RDS(ON) = 330 m (max) (@VGS = 2.5 V) 1 6 RDS(ON) = 240 m (max) (@VGS = 4.5 V) Q2 P-
8.3. Size:214K toshiba
ssm6l11tu.pdf 
SSM6L11TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L11TU High Speed Switching Applications Optimum for high-density mounting in small packages Low ON-resistance Q1: RDS(ON) = 395m (max) (@VGS = 1.8 V) Q2: RDS(ON) = 430m (max) (@VGS = -2.5 V) Unit: mm 2.10.1Q1 Absolute Maximum Ratings (Ta = 25C) 1.70.1Characteristics Symbol Rating U
8.4. Size:209K toshiba
ssm6l10tu.pdf 
SSM6L10TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L10TU High Speed Switching Applications Optimum for high-density mounting in small packages Low on-resistance Q1: Ron = 395m (max) (@VGS = 1.8 V) Unit: mmQ2: Ron = 980m (max) (@VGS = -1.8 V) 2.10.11.70.1Q1 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit1
8.5. Size:233K toshiba
ssm6l12tu.pdf 
SSM6L12TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L12TU High-Speed Switching Applications Optimum for high-density mounting in small packages Low ON-resistance Q1: RDS(ON) = 180m (max) (@VGS = 2.5 V) Unit: mm Q2: RDS(ON) = 430m (max) (@VGS = -2.5 V) 2.10.11.70.1Q1 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating
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