SSM6L40TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SSM6L40TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L40TU Power Management Switch Applications High-Speed Switching Applications Unit: mm2.10.1 N-ch: 4.0-V drive 1.70.1P-ch: 4.0 -V drive N-ch, P-ch, 2-in-1 Low ON-resistance Q1 N-ch: Ron = 182 m (max) (@VGS = 4 V) 1 6Ron = 122 m (max) (@VGS = 10 V) 2 5 Q2 P-ch: R

SSM6L36TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L36TU Unit: mm High-Speed Switching Applications 2.10.1 1.70.1 1.5-V drive Low ON-resistance Q1 N-ch: Ron = 1.52 (max) (@VGS = 1.5 V) 1 6 Ron = 1.14 (max) (@VGS = 1.8 V) 2 5 Ron = 0.85 (max) (@VGS = 2.5 V) 3 4Ron = 0.66 (max) (@VGS = 4.5 V) Ron = 0.63 (max) (@VGS =

SSM6L13TU TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type SSM6L13TU Power Management Switch Applications High-Speed Switching Applications Unit: mm2.10.1 1.8-V drive Nch , Pch 2in1 1.70.1 Low ONresistance: Nch RDS(ON) = 235 m (max) (@VGS = 1.8 V) RDS(ON) = 178 m (max) (@VGS = 2.5 V) : Pch RDS(ON) = 460 m (max) (@

SSM6L14FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L14FE Power Management Switch Applications High-Speed Switching Applications Unit: mm1.60.05 N-ch: 1.5-V drive P-ch: 1.5-V drive 1.20.05 N-ch, P-ch, 2-in-1 Low ON-resistance Q1 N-ch:RDS(ON) = 330 m (max) (@VGS = 2.5 V) 1 6 RDS(ON) = 240 m (max) (@VGS = 4.5 V) Q2 P-

SSM6L36FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L36FE High-Speed Switching Applications Unit: mm1.60.05 1.5-V drive1.20.05 Low ON-resistance Q1 Nch: Ron = 1.52 (max) (@VGS = 1.5 V) Ron = 1.14 (max) (@VGS = 1.8 V) Ron = 0.85 (max) (@VGS = 2.5 V) 1 6Ron = 0.66 (max) (@VGS = 4.5 V) Ron = 0.63 (max) (@VGS = 5.0 V) 2

SSM6L39TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L39TU Power Management Switch Applications High-Speed Switching Applications Unit: mm2.10.1 N-ch: 1.5-V drive 1.70.1P-ch: 1.8-V drive N-ch, P-ch, 2-in-1 1 6 Low ON-resistance Q1 N-ch: Ron = 247 m (max) (@VGS = 1.5 V) Ron = 190 m (max) (@VGS = 1.8 V) 2 5Ron = 139 m

SSM6L05FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type SSM6L05FU Power Management Switch Unit: mmHigh Speed Switching Applications Small package Low on resistance Q1: Ron = 0.8 (max) (@VGS = 4 V) Q2: Ron = 3.3 (max) (@VGS = -4 V) Low gate threshold voltage Q1 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrai

SSM6L09FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type(-MOSVI) SSM6L09FU Power Management Switch High Speed Switching Applications Unit: mm Small package Low on-resistance Q1: RDS(ON) = 0.7 (max) (@VGS = 10 V) Q2: RDS(ON) = 2.7 (max) (@VGS = -10 V) Q1 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source volt

SSM6L35FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L35FE High-Speed Switching Applications Unit: mm Analog Switch Applications 1.60.051.20.05 N-ch: 1.2-V drive P-ch: 1.2-V drive N-ch, P-ch, 2-in-1 1 6 Low ON-resistance Q1 N-ch: Ron = 20 (max) (@VGS = 1.2 V) 25: Ron = 8 (max) (@VGS = 1.5 V) : Ron = 4 (max) (

SSM6L35FU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L35FU High-Speed Switching Applications Unit: mm Analog Switch Applications N-ch: 1.2-V drive P-ch: 1.2-V drive N-ch, P-ch, 2-in-1 Low ON-resistance Q1 N-ch: Ron = 20 (max) (@VGS = 1.2 V) : Ron = 8 (max) (@VGS = 1.5 V) : Ron = 4 (max) (@VGS = 2.5 V) : Ron = 3

SSM6L11TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L11TU High Speed Switching Applications Optimum for high-density mounting in small packages Low ON-resistance Q1: RDS(ON) = 395m (max) (@VGS = 1.8 V) Q2: RDS(ON) = 430m (max) (@VGS = -2.5 V) Unit: mm 2.10.1Q1 Absolute Maximum Ratings (Ta = 25C) 1.70.1Characteristics Symbol Rating U

SSM6L10TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L10TU High Speed Switching Applications Optimum for high-density mounting in small packages Low on-resistance Q1: Ron = 395m (max) (@VGS = 1.8 V) Unit: mmQ2: Ron = 980m (max) (@VGS = -1.8 V) 2.10.11.70.1Q1 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit1

SSM6L16FE TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type(-MOSVI) SSM6L16FE High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low on-resistance Q1: RDS(ON) = 4 (max) (@VGS = 2.5 V) Q2: RDS(ON) = 12 (max) (@VGS = -2.5 V) Q1 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source volta

SSM6L12TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L12TU High-Speed Switching Applications Optimum for high-density mounting in small packages Low ON-resistance Q1: RDS(ON) = 180m (max) (@VGS = 2.5 V) Unit: mm Q2: RDS(ON) = 430m (max) (@VGS = -2.5 V) 2.10.11.70.1Q1 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating