SSM6L40TU MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SSM6L40TU
Маркировка: LL2
Тип транзистора: MOSFET
Полярность: NP
Максимальная рассеиваемая мощность (Pd): 0.5 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.6 V
Максимально допустимый постоянный ток стока |Id|: 1.6 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 5.1 nC
Выходная емкость (Cd): 34 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.122 Ohm
Тип корпуса: UF6
SSM6L40TU Datasheet (PDF)
ssm6l40tu.pdf
SSM6L40TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L40TU Power Management Switch Applications High-Speed Switching Applications Unit: mm2.10.1 N-ch: 4.0-V drive 1.70.1P-ch: 4.0 -V drive N-ch, P-ch, 2-in-1 Low ON-resistance Q1 N-ch: Ron = 182 m (max) (@VGS = 4 V) 1 6Ron = 122 m (max) (@VGS = 10 V) 2 5 Q2 P-ch: R
ssm6l36tu.pdf
SSM6L36TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L36TU Unit: mm High-Speed Switching Applications 2.10.1 1.70.1 1.5-V drive Low ON-resistance Q1 N-ch: Ron = 1.52 (max) (@VGS = 1.5 V) 1 6 Ron = 1.14 (max) (@VGS = 1.8 V) 2 5 Ron = 0.85 (max) (@VGS = 2.5 V) 3 4Ron = 0.66 (max) (@VGS = 4.5 V) Ron = 0.63 (max) (@VGS =
ssm6l13tu.pdf
SSM6L13TU TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type SSM6L13TU Power Management Switch Applications High-Speed Switching Applications Unit: mm2.10.1 1.8-V drive Nch , Pch 2in1 1.70.1 Low ONresistance: Nch RDS(ON) = 235 m (max) (@VGS = 1.8 V) RDS(ON) = 178 m (max) (@VGS = 2.5 V) : Pch RDS(ON) = 460 m (max) (@
ssm6l14fe.pdf
SSM6L14FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L14FE Power Management Switch Applications High-Speed Switching Applications Unit: mm1.60.05 N-ch: 1.5-V drive P-ch: 1.5-V drive 1.20.05 N-ch, P-ch, 2-in-1 Low ON-resistance Q1 N-ch:RDS(ON) = 330 m (max) (@VGS = 2.5 V) 1 6 RDS(ON) = 240 m (max) (@VGS = 4.5 V) Q2 P-
ssm6l36fe.pdf
SSM6L36FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L36FE High-Speed Switching Applications Unit: mm1.60.05 1.5-V drive1.20.05 Low ON-resistance Q1 Nch: Ron = 1.52 (max) (@VGS = 1.5 V) Ron = 1.14 (max) (@VGS = 1.8 V) Ron = 0.85 (max) (@VGS = 2.5 V) 1 6Ron = 0.66 (max) (@VGS = 4.5 V) Ron = 0.63 (max) (@VGS = 5.0 V) 2
ssm6l39tu.pdf
SSM6L39TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L39TU Power Management Switch Applications High-Speed Switching Applications Unit: mm2.10.1 N-ch: 1.5-V drive 1.70.1P-ch: 1.8-V drive N-ch, P-ch, 2-in-1 1 6 Low ON-resistance Q1 N-ch: Ron = 247 m (max) (@VGS = 1.5 V) Ron = 190 m (max) (@VGS = 1.8 V) 2 5Ron = 139 m
ssm6l05fu.pdf
SSM6L05FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type SSM6L05FU Power Management Switch Unit: mmHigh Speed Switching Applications Small package Low on resistance Q1: Ron = 0.8 (max) (@VGS = 4 V) Q2: Ron = 3.3 (max) (@VGS = -4 V) Low gate threshold voltage Q1 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrai
ssm6l09fu.pdf
SSM6L09FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type(-MOSVI) SSM6L09FU Power Management Switch High Speed Switching Applications Unit: mm Small package Low on-resistance Q1: RDS(ON) = 0.7 (max) (@VGS = 10 V) Q2: RDS(ON) = 2.7 (max) (@VGS = -10 V) Q1 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source volt
ssm6l35fe.pdf
SSM6L35FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L35FE High-Speed Switching Applications Unit: mm Analog Switch Applications 1.60.051.20.05 N-ch: 1.2-V drive P-ch: 1.2-V drive N-ch, P-ch, 2-in-1 1 6 Low ON-resistance Q1 N-ch: Ron = 20 (max) (@VGS = 1.2 V) 25: Ron = 8 (max) (@VGS = 1.5 V) : Ron = 4 (max) (
ssm6l35fu.pdf
SSM6L35FU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L35FU High-Speed Switching Applications Unit: mm Analog Switch Applications N-ch: 1.2-V drive P-ch: 1.2-V drive N-ch, P-ch, 2-in-1 Low ON-resistance Q1 N-ch: Ron = 20 (max) (@VGS = 1.2 V) : Ron = 8 (max) (@VGS = 1.5 V) : Ron = 4 (max) (@VGS = 2.5 V) : Ron = 3
ssm6l11tu.pdf
SSM6L11TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L11TU High Speed Switching Applications Optimum for high-density mounting in small packages Low ON-resistance Q1: RDS(ON) = 395m (max) (@VGS = 1.8 V) Q2: RDS(ON) = 430m (max) (@VGS = -2.5 V) Unit: mm 2.10.1Q1 Absolute Maximum Ratings (Ta = 25C) 1.70.1Characteristics Symbol Rating U
ssm6l10tu.pdf
SSM6L10TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L10TU High Speed Switching Applications Optimum for high-density mounting in small packages Low on-resistance Q1: Ron = 395m (max) (@VGS = 1.8 V) Unit: mmQ2: Ron = 980m (max) (@VGS = -1.8 V) 2.10.11.70.1Q1 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit1
ssm6l16fe.pdf
SSM6L16FE TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type(-MOSVI) SSM6L16FE High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low on-resistance Q1: RDS(ON) = 4 (max) (@VGS = 2.5 V) Q2: RDS(ON) = 12 (max) (@VGS = -2.5 V) Q1 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source volta
ssm6l12tu.pdf
SSM6L12TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L12TU High-Speed Switching Applications Optimum for high-density mounting in small packages Low ON-resistance Q1: RDS(ON) = 180m (max) (@VGS = 2.5 V) Unit: mm Q2: RDS(ON) = 430m (max) (@VGS = -2.5 V) 2.10.11.70.1Q1 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating
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