SSM6N16FE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSM6N16FE
   Código: DS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.1 V
   Cossⓘ - Capacitancia de salida: 9.8 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: SOT563 ES6

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SSM6N16FE Datasheet (PDF)

..1. Size:132K toshiba
ssm6n16fe.pdf

SSM6N16FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N16FE High Speed Switching Applications Unit: mmAnalog Switching Applications Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25

6.1. Size:133K toshiba
ssm6n16fu.pdf

SSM6N16FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N16FU High Speed Switching Applications Unit: mmAnalog Switch Applications Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25C)

8.1. Size:153K toshiba
ssm6n15fu.pdf

SSM6N15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FU High Speed Switching Applications Unit: mmAnalog Switching Applications Small package Low ON resistance : Ron = 4.0 (max) (@VGS = 4 V) : Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage V

8.2. Size:184K toshiba
ssm6n15fe.pdf

SSM6N15FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FE High Speed Switching Applications Unit: mmAnalog Switching Applications Small package Low ON resistance : Ron = 4.0 (max) (@VGS = 4 V) : Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage V

8.3. Size:117K toshiba
ssm6n17fu.pdf

SSM6N17FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N17FU High Speed Switching Applications Unit: mmAnalog Switch Applications Suitable for high-density mounting due to compact package High drain-source voltage High speed switching Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltag

8.4. Size:166K toshiba
ssm6n15afe.pdf

SSM6N15AFE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM6N15AFE Load Switching Applications Unit: mm1.60.05 2.5 V drive N-ch 2-in-11.20.05 Low ON-resistance: RDS(ON) = 3.6 (max) (@VGS = 4.0 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) 1 6Absolute Maximum Ratings (Ta = 25C) 25(Q1, Q2 Common) 3 4Characteristics Symbol

8.5. Size:190K toshiba
ssm6n15afu.pdf

SSM6N15AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM6N15AFU Load Switching Applications Unit: mm 2.5 V drive N-ch 2-in-1 Low ON-resistance: RDS(ON) = 3.6 (max) (@VGS = 4.0 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage VDSS

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