SSM6N16FE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM6N16FE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.15 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 0.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 9.8 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
Búsqueda de reemplazo de SSM6N16FE MOSFET
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SSM6N16FE datasheet
ssm6n16fu.pdf
SSM6N16FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N16FU High Speed Switching Applications Unit mm Analog Switch Applications Suitable for high-density mounting due to compact package Low on resistance Ron = 3.0 (max) (@VGS = 4 V) Ron = 4.0 (max) (@VGS = 2.5 V) Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25 C)
ssm6n15fu.pdf
SSM6N15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FU High Speed Switching Applications Unit mm Analog Switching Applications Small package Low ON resistance Ron = 4.0 (max) (@VGS = 4 V) Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage V
ssm6n15fe.pdf
SSM6N15FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FE High Speed Switching Applications Unit mm Analog Switching Applications Small package Low ON resistance Ron = 4.0 (max) (@VGS = 4 V) Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage V
Otros transistores... SSM6L40TU, SSM6N04FU, SSM6N05FU, SSM6N09FU, SSM6N15AFE, SSM6N15AFU, SSM6N15FE, SSM6N15FU, IRFB4115, SSM6N16FU, SSM6N17FU, SSM6N24TU, SSM6N25TU, SSM6N29TU, SSM6N35FE, SSM6N35FU, SSM6N36FE
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