Справочник MOSFET. SSM6N16FE

 

SSM6N16FE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSM6N16FE
   Маркировка: DS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.15 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 9.8 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm
   Тип корпуса: SOT563 ES6

 Аналог (замена) для SSM6N16FE

 

 

SSM6N16FE Datasheet (PDF)

 ..1. Size:132K  toshiba
 ssm6n16fe.pdf

SSM6N16FE SSM6N16FE

SSM6N16FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N16FE High Speed Switching Applications Unit: mmAnalog Switching Applications Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25

 6.1. Size:133K  toshiba
 ssm6n16fu.pdf

SSM6N16FE SSM6N16FE

SSM6N16FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N16FU High Speed Switching Applications Unit: mmAnalog Switch Applications Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25C)

 8.1. Size:153K  toshiba
 ssm6n15fu.pdf

SSM6N16FE SSM6N16FE

SSM6N15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FU High Speed Switching Applications Unit: mmAnalog Switching Applications Small package Low ON resistance : Ron = 4.0 (max) (@VGS = 4 V) : Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage V

 8.2. Size:184K  toshiba
 ssm6n15fe.pdf

SSM6N16FE SSM6N16FE

SSM6N15FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FE High Speed Switching Applications Unit: mmAnalog Switching Applications Small package Low ON resistance : Ron = 4.0 (max) (@VGS = 4 V) : Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage V

 8.3. Size:117K  toshiba
 ssm6n17fu.pdf

SSM6N16FE SSM6N16FE

SSM6N17FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N17FU High Speed Switching Applications Unit: mmAnalog Switch Applications Suitable for high-density mounting due to compact package High drain-source voltage High speed switching Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltag

 8.4. Size:166K  toshiba
 ssm6n15afe.pdf

SSM6N16FE SSM6N16FE

SSM6N15AFE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM6N15AFE Load Switching Applications Unit: mm1.60.05 2.5 V drive N-ch 2-in-11.20.05 Low ON-resistance: RDS(ON) = 3.6 (max) (@VGS = 4.0 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) 1 6Absolute Maximum Ratings (Ta = 25C) 25(Q1, Q2 Common) 3 4Characteristics Symbol

 8.5. Size:190K  toshiba
 ssm6n15afu.pdf

SSM6N16FE SSM6N16FE

SSM6N15AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM6N15AFU Load Switching Applications Unit: mm 2.5 V drive N-ch 2-in-1 Low ON-resistance: RDS(ON) = 3.6 (max) (@VGS = 4.0 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage VDSS

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History: FDP020N06B | SIHFBC30L

 

 
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