BUK207-50Y MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK207-50Y
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 50 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V
|Id|ⓘ - Corriente continua
de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.22 Ohm
Encapsulados: SOT426
Búsqueda de reemplazo de BUK207-50Y MOSFET
- Selecciónⓘ de transistores por parámetros
BUK207-50Y datasheet
..1. Size:94K philips
buk207-50y 1.pdf 
Philips Semiconductors Product specification TOPFET high side switch BUK207-50Y SMD version of BUK203-50Y DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 1.6 A 5 pin plastic surface mount envelope, configured as a single high side switch. SYMBOL PARAM
5.1. Size:93K philips
buk207-50x 1.pdf
Philips Semiconductors Product specification TOPFET high side switch BUK207-50X SMD version of BUK203-50X DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 1.6 A 5 pin plastic surface mount envelope, configured as a single high side switch. SYMBOL PARAM
9.1. Size:94K philips
buk206-50x 1.pdf
Philips Semiconductors Product specification TOPFET high side switch BUK206-50X SMD version of BUK202-50X DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 9 A 5 pin plastic surface mount envelope, configured as a single high side switch. SYMBOL PARAMET
9.2. Size:92K philips
buk203-50y 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK203-50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 1.6 A 5 pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPL
9.3. Size:93K philips
buk202-50y 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK202-50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 9 A 5 pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPLIC
9.4. Size:97K philips
buk205-50x 1.pdf
Philips Semiconductors Product specification TOPFET high side switch BUK205-50X SMD version of BUK201-50X DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 6 A 5 pin plastic surface mount envelope, configured as a single high side switch. SYMBOL PARAMET
9.5. Size:91K philips
buk203-50x 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK203-50X TOPFET high side switch DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 1.6 A 5 pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPL
9.6. Size:99K philips
buk204-50y 1.pdf
Philips Semiconductors Product specification TOPFET high side switch BUK204-50Y SMD version of BUK200-50Y DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 3.5 A 5 pin plastic surface mount envelope, configured as a single high side switch. SYMBOL PARAM
9.7. Size:95K philips
buk201-50x 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK201-50X TOPFET high side switch DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 6 A 5 pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPLIC
9.8. Size:96K philips
buk200-50x 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK200-50X TOPFET high side switch DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 3.5 A 5 pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPL
9.9. Size:93K philips
buk202-50x 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK202-50X TOPFET high side switch DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 9 A 5 pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPLIC
9.10. Size:97K philips
buk200-50y 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK200-50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 3.5 A 5 pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPL
9.11. Size:96K philips
buk201-50y 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK201-50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 6 A 5 pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPLIC
9.12. Size:98K philips
buk204-50x 1.pdf
Philips Semiconductors Product specification TOPFET high side switch BUK204-50X SMD version of BUK200-50X DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 3.5 A 5 pin plastic surface mount envelope, configured as a single high side switch. SYMBOL PARAM
9.13. Size:98K philips
buk205-50y 1.pdf
Philips Semiconductors Product specification TOPFET high side switch BUK205-50Y SMD version of BUK201-50Y DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 6 A 5 pin plastic surface mount envelope, configured as a single high side switch. SYMBOL PARAMET
9.14. Size:95K philips
buk206-50y 1.pdf
Philips Semiconductors Product specification TOPFET high side switch BUK206-50Y SMD version of BUK202-50Y DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 9 A 5 pin plastic surface mount envelope, configured as a single high side switch. SYMBOL PARAMET
Otros transistores... BUK114-50S
, BUK116-50L
, BUK116-50S
, BUK200-50X
, BUK203-50X
, BUK203-50Y
, BUK204-50Y
, BUK207-50X
, MMIS60R580P
, BUK426-1000A
, BUK426-1000B
, BUK436W-1000B
, BUK436W-200A
, BUK436W-200B
, BUK436W-800A
, BUK436W-800B
, BUK438W-800A
.
History: BUK104-50SP
